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Hitachi Semiconductor |
www.DataSheet4U.com
HN29WT800 Series
HN29WB800 Series
1048576-word × 8-bit / 524288-word × 16-bit CMOS Flash Memory
ADE-203-537A(Z)
Rev. 1.0
May. 9, 1997
Description
The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword × 8-bit/512-kword × 16-bit CMOS Flash
Memory with DINOR (DIvided bitline NOR) type memory cells, that realize programming and erase
capabilities with a single 3.3 V power supply. The built-in Sequence Controller allows Automatic
Program/Erase without complex external control. HN29WT800 Series, HN29WB800 Series enable the low
power and high performance systems such as mobile, personal computing and communication products.
Features
• On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
• Access time: 80/100/120 ns (max)
• Low power dissipation:
ICC = 30 mA (max) (Read)
ICC = 200 µA (max) (Standby)
ICC = 40 mA (max) (Program)
ICC = 40 mA (max) (Erase)
ICC = 1 µA (typ) (Deep powerdown)
• Automatic page programming:
Programming time: 25 ms (typ)
Program unit: 128 word
• Automatic erase:
Erase time: 50 ms (typ)
Erase unit: Boot block; 8-kword/16-kbyte × 1
Parameter block; 4-kword/8-kbyte × 2
Main block; 16-kword/32-kbyte × 1
32-kword/64-kbyte × 15
This product is compatible with M5M29FB/T800xx by Ltd. Mitsubishi.
HN29WT800 Series, HN29WB800 Series
• Block boot:
HN29WT800 Series: Top boot
HN29WB800 Series: Bottom boot
• Program/Erase endurance
10,000 cycles
• Other functions:
Software command control
Selective block lock
Program suspend/Resume
Erase suspend/Resume
Status register read
• Compatible with M5M29FB/T800xx by Ltd. Mitsubishi
Ordering Information
Type No.
HN29WT800T-8
HN29WT800T-10
HN29WT800T-12
HN29WB800T-8
HN29WB800T-10
HN29WB800T-12
HN29WT800R-8
HN29WT800R-10
HN29WT800R-12
HN29WB800R-8
HN29WB800R-10
HN29WB800R-12
Access time
80 ns
100 ns
120 ns
80 ns
100 ns
120 ns
80 ns
100 ns
120 ns
80 ns
100 ns
120 ns
Package
12 × 20.0 mm2 48-pin plastic TSOP I (TFP-48D)
12 × 20.0 mm2 48-pin plastic TSOP I (Reverse)
(TFP-48DR)
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