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Vanguard International Semiconductor |
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VIS
VG26(V)(S)17400D
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Description
The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an
advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power
supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application.
A new refresh feature called “ self-refresh “ is supported and very slow CBR cycles are being performed. It is
packaged in JEDEC standard 26/24 - pin plastic SOJ or TSOP (II).
Features
• Single 5V (±10 %) or 3.3V (±10 %) only power supply
• High speed tRAC access time : 50/60 ns
• Low power dissipation
- Active mode : 5V version 605/550 mW (Max.)
3.3V version 396/360 mW (Max.)
- Standby mode : 5V version 1.375 mW (Max.)
3.3V version 0.54 mW (Max.)
• Fast Page Mode access
• I/O level : TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
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• 2048 refresh cycles in 32 ms (Std) or 128ms (S - version)
• 4 refresh mode :
- RAS only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self - refresh (S - version)
DataShee
DataSheet4U.com
DataShDeoectu4mUen.ct:o1Gm5-0126
Rev.1
Page 1
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VIS
VG26(V)(S)17400D
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Pin configuration
26/24 - PIN 300mil Plastic SOP
Pin configuration
26/24 - PIN 300mil Plastic TSOP (II)
VCC
DQ1
DQ2
WE
RAS
NC
1
2
3
4
5
6
26 VSS
25 DQ4
DQ3
24
23 CAS
22 OE
21 A9
VCC
DQ1
DQ2
WE
RAS
NC
1
2
3
4
5
6
26 VSS
25 DQ4
DQ3
24
23 CAS
22 OE
21 A9
et4U.com
A10
A0
A1
A2
A3
VCC
8
9
10
11
12
13
19 A8
18 A7
17 A6
16 A5
15 A4
14 VSS
A10
A0
A1
A2
A3
VCC
8
9
10
11
12
13
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19 A8
18 A7
17 A6
16 A5
15 A4
14 VSS
DataShee
Pin Description
Pin Name
Function
A0 - A10
Address inputs
- Row address
- Column address
- Refresh address
A0 - A10
A0 - A10
A0 - A10
DQ1 ~ DQ4 Data - in/data - out
RAS
Row address strobe
CAS
Column address strobe
WE Write enable
OE Output enable
Vcc Power (+ 5V or + 3.3V)
Vss Ground
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DataShDeoectu4mUen.ct:o1mG5-0126
Rev.1
Page 2
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