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KM23S32000D 반도체 회로 부품 판매점

(KM23x32000xTY) 32M-Bit CMOS Mask ROM



Samsung Semiconductor 로고
Samsung Semiconductor
KM23S32000D 데이터시트, 핀배열, 회로
KM23V32000D(E)TY/KM23S32000D(E)TY
CMOS MASK ROM
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM
FEATURES
GENERAL DESCRIPTION
Switchable organization
The KM23V32000D(E)TY and KM23S32000D(E)TY are fully
4,194,304x8(byte mode)
static mask programmable ROM fabricated using silicon gate
2,097,152x16(word mode)
CMOS process technology, and is organized either as
Fast access time
4,194,304 x8 bit(byte mode) or as 2,097,152x16 bit(word
Random Access Time
3.3V/3.0V Operation : 100ns(Max.)
2.5V Operation : 150ns(Max.)
mode) depending on BHE voltage level.(See mode selection
table)
Supply voltage
This device operates with low power supply, and all inputs and
KM23V32000D(E)TY : single +3.0V/ single +3.3V
KM23S32000D(E)TY : single +2.5V
Current consumption
mOperating : 40mA(Max.)
Standby : 30µA(Max.)
oFully static operation
All inputs and outputs TTL compatible
.cThree state outputs
Package
-. KM23V(S)32000D(E)TY : 48-TSOP1-1218
outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23V32000D(E)TY and KM23S32000D(E)TY are pack-
aged in a 48-TSOP1.
t4UFUNCTIONAL BLOCK DIAGRAM
heeA20
S.
.
ta.
.
.
a.
.
.
.DA0
A-1
wwCE
mOE
w www.DataSheet4U.coBHE
X
BUFFERS
AND
DECODER
Y
BUFFERS
AND
DECODER
CONTROL
LOGIC
MEMORY CELL
MATRIX
(2,097,152x16/
4,194,304x8)
SENSE AMP.
DATA OUT
BUFFERS
...
Q0/Q8 Q7/Q15
Pin Name
A0 - A20
Q0 - Q14
Q15 /A-1
BHE
CE
OE
VCC
VSS
Pin Function
Address Inputs
Data Outputs
Output 15(Word mode)/
LSB Address(Byte mode)
Word/Byte selection
Chip Enable
Output Enable
Power
Ground


KM23S32000D 데이터시트, 핀배열, 회로
KM23V32000D(E)TY/KM23S32000D(E)TY
PRODUCT INFORMATION
Product
KM23V32000DTY
KM23S32000DTY
KM23V32000DETY
KM23S32000DETY
Operating
Temp Range
0°C ~ 70°C
-20°C ~ 85°C
CMOS MASK ROM
VCC Range
(Typical)
3.3V/3.0V
2.5V
3.3V/3.0V
2.5V
Speed
(ns)
100
150
100
150
PIN CONFIGURATION
BHE
A16
A15
A14
A13
A12
A11
A10
A9
A8
A19
VSS
A20
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
TSOP I
KM23V32000D(E)TY
KM23S32000D(E)TY
48 VSS
47 VSS
46 Q15/A-1
45 Q7
44 Q14
43 Q6
42 Q13
41 Q5
40 Q12
39 Q4
38 VCC
37 VCC
36 VSS
35 Q11
34 Q3
33 Q10
32 Q2
31 Q9
30 Q1
29 Q8
28 Q0
27 OE
26 VSS
25 VSS
ABSOLUTE MAXIMUM RATINGS
Item
Voltage on Any Pin Relative to
Symbol
VIN
Rating
-0.3 to +4.5
Unit
V
Remark
-
Temperature Under Bias
Storage Temperature
TBIAS
TSTG
-10 to +85
-55 to +150
°C
°C
-
-
Operating Temperature
0 to +70
°C
KM23V32000DTY
KM23S32000DTY
TA
-20 to +85
°C
KM23V32000DETY
KM23S32000DETY
NOTE : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the
conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.




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KM23S32000D cmos

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