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PDF HN27C4000G Data sheet ( Hoja de datos )

Número de pieza HN27C4000G
Descripción 524288-Word x 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
Fabricantes Hitachi Semiconductor 
Logotipo Hitachi Semiconductor Logotipo



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No Preview Available ! HN27C4000G Hoja de datos, Descripción, Manual

ADE-203-311A (Z)
HN27C4000G Series
524288-Word × 8-Bit/262144-Word × 16-Bit
CMOS UV Erasable and Programmable ROM
Rev. 1
Nov. 10, 1994
The Hitachi HN27C4000 is a 4-Mbit UV erasable
and electrically programmable ROM that is
organized either as 524288-word × 8 bit or as
262144-word × 16 bit, featuring extra-high speed
burst mode that gives two times faster 4-word or 8-
byte serial access than normal. And also high
speed and fast programming are served as well as
the existing Hitachi 4M device HN27C4096 and
HN27C4001. Fabricated on advanced fine process
and high speed circuitry technique, HN27C4000
makes high speed access time and low power
dissipation in either active or stand-by mode.
Therefore, it is suitable for all systems featuring
high speed microprocessor such as the 80386,
80486, 68030, 68040 and so on.
Features
• Organization: 524288-word × 8-bit/262144-
word × 16-bit (BYTE /VPP enables
selection byte-wide or word-wide)
• High speed: Access time 100 ns/120 ns/150 ns
(max)
Burst access time 50 ns/60 ns/60 ns
(max)
• Low power dissipation:
Standby mode; 5 µW (typ),
Active mode; 150 mW/MHz (typ)
• Fast high reliability page programming, fast
high-reliability programming and option
programming: Program voltage; +12.5 V DC
Program time; 3.5 sec (min)
(Theoretical in Page
programming)
• Inputs and outputs TTL compatible during both
read and program modes
• Pin arrangement: 40-pin EIAJ standard pin
compatible with HN62414/
HN62434
• Device identifier mode: Manufacturer code and
device code
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1 page




HN27C4000G pdf
HN27C4000G Series
Capacitance (Ta = 25°C, f = 1 MHz)
Item
Input capacitance
Output capacitance
Symbol Min
Cin —
Cout
Typ
Max Unit Test conditions Notes
12 pF Vin = 0 V
Except BYTE/VPP
20 pF Vout = 0 V
Read Operation
DC Characteristics (VCC = 5 V ± 10%, VPP = VSS to VCC, Ta = 0 to +70°C)
Item
Symbol Min Typ Max Unit Test conditions
Input leakage current
Output leakage current
VPP current
Standby VCC current
Operating VCC current
Input voltage
ILI
ILO
IPP1
ISB1
ISB2
ICC1
ICC2
VIL
VIH
——
——
—1
——
—1
——
——
–0.3*1
2.2 —
2
2
20
1
20
35
120
0.8
VCC
+ 1*2
µA
µA
µA
mA
µA
mA
mA
V
V
Vin = 5.5 V
Vout = 5.5 V/0.45 V
VPP = 5.5 V
CE = VIH
CE = VCC ± 0.3 V
Iout = 0 mA, f = 1 MHz
Iout = 0 mA, f = 10 MHz
Output voltage
VOL
— — 0.45 V
IOL = 2.1 mA
VOH
2.4 — — V
IOH = –400 µA
Notes: 1. VIL min = –1.0 V for pulse width 50 ns
VIL min = –2.0 V for pulse width 20 ns
2. VIH max = VCC +1.5 V for pulse width 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
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HN27C4000G arduino
HN27C4000G Series
AC Characteristics (VCC = 6.25 V ± 0.25 V, VPP = 12.5 V ± 0.3 V, Ta = 25°C ± 5°C)
Test Conditions
• Input pulse levels: 0.45 to 2.4 V
• Input rise and fall times: 20 ns
• Reference levels for measuring timing: Inputs; 0.8 V, 2.0 V,
Outputs; 0.8 V, 2.0 V
Item
Symbol Min Typ Max Unit Test conditions
Address setup time
OE setup time
Data setup time
Address hold time
Data hold time
OE high to output float delay
VPP setup time
tAS
tOES
tDS
tAH
tDH
tDF*1
tVPS
2 — — µs
2 — — µs
2 — — µs
0 — — µs
2 — — µs
0 — 130 ns
2 — — µs
VCC setup time
CE initial programming
pulse width
tVCS
tPW
2 — — µs
47.5 50.0 52.5 µs
CE setup time
Data valid from OE
CE pulse width during data latch
OE = VH setup time
OE = VH hold time
VPP hold time*2
tCES
tOE
tLW
tOHS
tOHH
tVRS
2 — — µs
0 — 150 ns
1 — — µs
2 — — µs
2 — — µs
1 — — µs
Notes: 1. tDF is defined as the time at which the output achieves the open circuit condition and data is no
longer driven.
2. Page program mode will be reset when VPP is set to VCC or less.
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