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VG36641641BT 반도체 회로 부품 판매점

CMOS Synchronous Dynamic RAM



Vanguard International Semiconductor 로고
Vanguard International Semiconductor
VG36641641BT 데이터시트, 핀배열, 회로
VIS
Description
Preliminary
VG36641641BT
CMOS Synchronous Dynamic RAM
The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is
fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
power supply. It is packaged in JEDEC standard pinout and standard plastic TSOP package.
Features
• Single 3.3V (±0.3V ) power supply
• High speed clock cycle time : 8/10ns
• Fully synchronous with all signals referenced to a positive clock edge
• Programmable CAS Iatency (2,3)
• Programmable burst length (1,2,4,8,&Full page)
• Programmable wrap sequence (Sequential/Interleave)
• Automatic precharge and controlled precharge
• Auto refresh and self refresh modes
• Quad Internal banks controlled by A12 & A13 (Bank select)
• Each Bank can operate simultaneously and independently
• LVTTL compatible I/O interface
• Random column access in every cycle
• X16 organization
• Input/Output controlled by LDQM and UDQM
• 4,096 refresh cycles/64ms
• Burst termination by burst stop and precharge command
• Burst read/single write option
The information shown is subject to change without notice.
Document : 1G5-0127
Rev2
Page 1


VG36641641BT 데이터시트, 핀배열, 회로
VIS
Pin Configuration
Preliminary
VG36641641BT
CMOS Synchronous Dynamic RAM
VG36641641 (2)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
WE
CAS
RAS
CS
A13/BA0
A12/BA1
A10
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
VSS
Pin Description
VG36641641
Pin Name
A0 - A11
A12,A13
DQ0 ~ DQ15
RAS
CAS
WE
VSS
VDD
Function
Address inputs
Bank select
Data - in/data - out
Row address strobe
Column address strobe
Write enable
Ground
Power ( + 3.3V)
Pin Name
LDQM
UDQM
CLK
CKE
CS
VDDQ
VSSQ
Function
Upper DQ Mask enable,
Lower DQ Mask enable.
Clock input
Clock enable
Chip select
Supply voltage for DQ
Ground for DQ
Document : 1G5-0127
Rev2
Page 2




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VG36641641BT cmos

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CMOS Synchronous Dynamic RAM - Vanguard International Semiconductor