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Samsung semiconductor |
K6F3216T6M Family
CMOS SRAM
Document Title
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
1.0
Draft Date
November 4, 2003
Remark
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
November 2002
K6F3216T6M Family
CMOS SRAM
2M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 2M x16
• Power Supply Voltage: 2.7~3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 55-TBGA-7.50x12.00
GENERAL DESCRIPTION
The K6F3216T6M families are fabricated by SAMSUNG′s
advanced full CMOS process technology. The families support
industrial operating temperature ranges and have chip scale
package for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6F3216T6M-F
Industrial(-40~85°C)
1. The parameter is measured with 30pF test load.
2.7~3.6V
Speed
551)/70ns
Power Dissipation
Standby
(ISB1, Max.)
40µA
Operating
(ICC1, Max)
7mA
PKG Type
55-TBGA-7.50x12.00
PIN DESCRIPTION
12 345 6 78
A N.C
N.C
B N.C
C LB OE A0 A1 A2 CS2
D I/O9 UB A3 A4 CS1 I/O1
E
I/O10 I/O11 A5
A6 I/O2 I/O3
F Vss I/O12 A17 A7 I/O4 Vcc
G Vcc I/O13 N.C A16 I/O5 Vss
H I/O15 I/O14 A14 A15 I/O6 I/O7
J I/O16 A19 A12 A13 WE I/O8
K
A18 A8
A9 A10 A11 A20
L N.C
N.C
M N.C
N.C
55-TBGA: Top View (Ball Down)
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Row
Addresses
Row
select
Memory
Cell
Array
Vcc
Vss
I/O1~I/O8
I/O9~I/O16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
CS1
CS2
OE
WE Control Logic
UB
LB
Name
Function
CS1, CS2 Chip Select Inputs
OE Output Enable Input
WE Write Enable Input
A0~A20 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
Name
Function
Vcc Power
Vss Ground
UB Upper Byte(I/O9~16)
LB Lower Byte(I/O1~8)
N.C No Connection
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 Revision 1.0
November 2002
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