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K6F2008U2E-YF70 반도체 회로 부품 판매점

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM



Samsung semiconductor 로고
Samsung semiconductor
K6F2008U2E-YF70 데이터시트, 핀배열, 회로
K6F2008U2E Family
CMOS SRAM
Document Title
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
1.0 Finalize
Draft Date
Remark
February 28, 2001 Preliminary
September 27, 2001 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
September 2001


K6F2008U2E-YF70 데이터시트, 핀배열, 회로
K6F2008U2E Family
CMOS SRAM
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
• Process Technology: Full CMOS
• Organization: 256Kx8
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 32-TSOP1-0813.4F
GENERAL DESCRIPTION
The K6F2008U2E families are fabricated by SAMSUNGs
advanced Full CMOS process technology. The families support
various operating temperature ranges and have various pack-
age types for user flexibility of system design. The families also
supports low data retention voltage for battery back-up opera-
tion with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range Speed(ns)
K6F2008U2E-F
Industrial(-40~85°C)
2.7~3.3V 551)/70ns
1. The parameter is measured with 30pF test load.
2. Typical values are measured at VCC=3.0V, TA=25°C and not 100% tested.
Power Dissipation
Standby Operating
(ISB1, Typ.) (ICC1, Max)
0.5µA2)
2mA
PKG Type
32-TSOP1-0813.4F
PIN DESCRIPTION
A11
A9
A8
A13
WE
CS2
A15
VCC
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-sTSOP
Type1-Forward
32 OE
31 A10
30 CS1
29 I/O8
28 I/O7
27 I/O6
26 I/O5
25 I/O4
24 VSS
23 I/O3
22 I/O2
21 I/O1
20 A0
19 A1
18 A2
17 A3
Name
Function
Name
Function
CS1, CS2 Chip Select Input I/O1~I/O8 Data Inputs/Outputs
OE Output Enable
Vcc Power
WE Write Enable Input Vss Ground
A0~A17 Address Inputs
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Row
select
Memory array
1024 rows
256x8 columns
I/O1 Data
cont
I/O8
Data
cont
CS1
CS2 Control
WE logic
OE
I/O Circuit
Column select
Address
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 Revision 1.0
September 2001




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256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM - Samsung semiconductor