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K6F1616T6B-TF70 반도체 회로 부품 판매점

1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM



Samsung semiconductor 로고
Samsung semiconductor
K6F1616T6B-TF70 데이터시트, 핀배열, 회로
K6F1616T6B Family
CMOS SRAM
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
- Changed Isb1(max.) from 25uA to 15uA
1.0 Finalized
- Added Package Type ’48-TBGA - 7.00x7.00’
Draft Date
May 21, 2003
June 17, 2003
Remark
Preliminary
Preliminary
August 13, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
August 2003


K6F1616T6B-TF70 데이터시트, 핀배열, 회로
K6F1616T6B Family
CMOS SRAM
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology: Full CMOS
Organization: 1M x16
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00
GENERAL DESCRIPTION
The K6F1616T6B families are fabricated by SAMSUNGs
advanced full CMOS process technology. The families support
industrial operating temperature ranges. The families also sup-
port low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6F1616T6B-F
Industrial(-40~85°C)
2.7~3.6V
Speed
551)/70ns
Power Dissipation
Standby Operating
(ISB1, Typ.) (ICC1, Max)
5µA2)
5mA
PKG Type
48-TSOP1-1220F
48-TBGA - 7.00x7.00
1. The parameter is measured with 30pF test load.
2. Typical value is measured at VCC=3.3V, TA=25°C and not 100% tested.
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
CS2
NC
UB
LB
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-TSOP1-1220F
48 A16
47 NC
46 Vss
45 I/O16
44 I/O8
43 I/O15
42 I/O7
41 I/O14
40 I/O6
39 I/O13
38 I/O5
37 Vcc
36 I/O12
35 I/O4
34 I/O11
33 I/O3
32 I/O10
31 I/O2
30 I/O9
29 I/O1
28 OE
27 Vss
26 CS1
25 A0
1 23456
A LB OE A0 A1 A2 CS2
Row
Addresses
I/O1~I/O8
I/O9~I/O16
Clk gen.
Precharge circuit.
Row
select
Memory
Cell
Array
Vcc
Vss
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
B
I/O9 UB
A3
A4
CS1
I/O1
C
I/O10 I/O11
A5
A6 I/O2 I/O3
D Vss I/O12 A17 A7 I/O4 Vcc
E Vcc I/O13 Vss A16 I/O5 Vss
F
I/O15 I/O14
A14
A15
I/O6
I/O7
G
I/O16
A19
A12
A13
WE
I/O8
H
A18 A8
A9 A10 A11 NC
48-TBGA: Top View (Ball Down)
CS1
CS2
OE
WE Control Logic
UB
LB
Name
Function
Name
Function
CS1, CS2 Chip Select Inputs Vcc Power
OE Output Enable Input Vss Ground
WE Write Enable Input UB Upper Byte(I/O9~16)
A0~A19 Address Inputs
LB Lower Byte(I/O1~8)
I/O1~I/O16 Data Inputs/Outputs NC No Connection
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 Revision 1.0
August 2003




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K6F1616T6B-TF70

1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM - Samsung semiconductor