A42L2604V-50 반도체 회로 부품 판매점
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
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 AMIC Technology |
A42L2604 Series
Preliminary
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Document Title
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Revision History
Rev. No.
0.0
0.1
0.2
0.3
History
Initial issue
Modify symbol HE dimensions in TSOP 24L package information
Add -45 grade and modify the AC, DC data
Add -U type spec.
Modify DC data and all parts guarantee self-refresh mode
Issue Date
June 13, 2001
July 10, 2001
November 30, 2001
June 10, 2002
Remark
Preliminary
PRELIMINARY (June, 2002, Version 0.3)
AMIC Technology, Inc.
A42L2604 Series
Preliminary
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Features
n Organization: 4,194,304 words X 4 bits
n Part Identification
- A42L2604 (2K Ref.)
n Single 3.3V power supply/built-in VBB generator
n Low power consumption
- Operating: 80mA (-45 max)
- Standby: 1.0mA (TTL), 1.5mA (CMOS),
350µA (Self-refresh current)
n High speed
- 45/50 ns RAS access time
- 20/22 ns column address access time
- 12/13 ns CAS access time
- 18/20 ns EDO Page Mode Cycle Time
General Description
The A42L2604 is a new generation randomly accessed
memory for graphics, organized in a 4,194,304-word by
4-bit configuration. This product can execute Write and
Read operation via CAS pin.
The A42L2604 offers an accelerated Fast Page Mode
Pin Configuration
n SOJ
n TSOP
VCC
I/O 0
I/O 1
WE
RAS
NC
1
2
3
4
5
6
A10
A0
A1
A2
A3
VCC
8
9
10
11
12
13
26 VSS
25 I/O3
24 I/O2
23 CAS
22 OE
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 VSS
VCC
I/O 0
I/O 1
WE
RAS
NC
1
2
3
4
5
6
A10
A0
A1
A2
A3
VCC
8
9
10
11
12
13
26 VSS
25 I/O3
24 I/O2
23 CAS
22 OE
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 VSS
n Industrial operating temperature range: -40°C to +85°C
for -U
n Fast Page Mode with Extended Data Out
n 2K Refresh Cycle in 32ms
n Read-modify-write, RAS -only, CAS -before- RAS ,
Hidden refresh capability
n TTL-compatible, three-state I/O
n JEDEC standard packages
- 300mil, 24/26-pin SOJ
- 300mil, 24/26-pin TSOP type II package
cycle with a feature called Extended Data Out (EDO).
This allow random access of up to 2048(2K Ref.) words
within a row at a 56/50 MHz EDO cycle, making the
A42L2604 ideally suited for graphics, digital signal
processing and high performance computing systems.
Pin Descriptions
Symbol
A0 – A10
I/O0 - I/O3
RAS
CAS
WE
OE
VCC
VSS
NC
Description
Address Inputs (2K product)
Data Input/Output
Row Address Strobe
Column Address Strobe
Write Enable
Output Enable
3.3V Power Supply
Ground
No Connection
PRELIMINARY (June, 2002, Version 0.3)
1
AMIC Technology, Inc.
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( amic )
A42L2604V-50 cmos
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관련 데이터시트
A42L2604V-50
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE - AMIC Technology
A42L2604V-50U
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE - AMIC Technology