A420616V-45U 반도체 회로 부품 판매점
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
|
 AMIC Technology |
A420616 Series
Preliminary
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Document Title
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Revision History
Rev. No.
0.0
0.1
0.2
History
Initial issue
Modify AC, DC data
Modify DC data and all parts guarantee self-refresh mode
Issue Date
June 23, 1999
February 7, 2002
June 10, 2002
Remark
Preliminary
PRELIMINARY (June, 2002, Version 0.2)
AMIC Technology, Inc.
A420616 Series
Preliminary
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
Features
n Organization: 1,048,576 words X 16 bits
n Part Identification
- A420616 (1K Ref.)
n Single 5.0V power supply/built-in VBB generator
n Low power consumption
- Operating: 120mA (-45 max)
- Standby: 1.0mA (TTL), 1.0mA (CMOS)
1.5mA (Self-refresh current)
n High speed
- 45/50 ns RAS access time
- 20/22 ns column address access time
- 12/13 ns CAS access time
- 18/20 ns EDO Page Mode Cycle Time
General Description
The A420616 is a new generation randomly accessed
memory for graphics, organized in a 1,048,576-word by
16-bit configuration. This product can execute Byte Write
and Byte Read operation via two CAS pins.
The A420616 offers an accelerated Fast Page Mode
Pin Configuration
nSOJ
n TSOP
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 VSS
41 I/O15
40 I/O14
39 I/O13
38 I/O12
37 VSS
36 I/O11
35 I/O10
34 I/O9
33 I/O8
32 NC
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 VSS
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 VSS
43 I/O15
42 I/O14
41 I/O13
40 I/O12
39 VSS
38 I/O11
37 I/O10
36 I/O9
35 I/O8
34 NC
33 NC
32 LCAS
31 UCAS
30 OE
29 A9
28 A8
27 A7
26 A6
25 A5
24 A4
23 VSS
n Industrial operating temperature range: -40°C to 85°C
for -U
n Fast Page Mode with Extended Data Out
n Separate CAS ( UCAS , LCAS ) for byte selection
n 1K Refresh Cycle in 16ms
n Read-modify-write, RAS -only, CAS -before- RAS ,
Hidden refresh capability
n TTL-compatible, three-state I/O
n JEDEC standard packages
- 400mil, 42-pin SOJ
- 400mil, 44/50 TSOP type II package
This allow random access of up to 1024 words within a
row at a 56/50 MHz EDO cycle, making the A420616
ideally suited for graphics, digital signal processing and
high performance computing systems.
Pin Descriptions
Symbol
A0 – A9
I/O0 - I/O15
RAS
LCAS
UCAS
WE
OE
VCC
VSS
NC
Description
Address Inputs
Data Input/Output
Row Address Strobe
Column Address Strobe for Lower Byte
(I/O0 – I/O7)
Column Address Strobe for Upper Byte
(I/O8 – I/O15)
Write Enable
Output Enable
5.0V Power Supply
Ground
No Connection
cycle with a feature called Extended Data Out (EDO).
PRELIMINARY (June, 2002, Version 0.2)
1
AMIC Technology, Inc.
|
PDF 파일 내의 페이지 : 총 25 페이지
제조업체: AMIC Technology
( amic )
A420616V-45U cmos
데이터시트 다운로드 :
[ A420616V-45U.PDF ]
[ A420616V-45U 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
A420616V-45
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE - AMIC Technology
A420616V-45U
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE - AMIC Technology