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K6F4008U2E-F 반도체 회로 부품 판매점

512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM



Samsung semiconductor 로고
Samsung semiconductor
K6F4008U2E-F 데이터시트, 핀배열, 회로
K6F4008U2E Family
CMOS SRAM
Document Title
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
1.0 Finalize
Draft Date
Remark
October 25, 2000 Preliminary
March 12, 2001 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 1.0
March 2001


K6F4008U2E-F 데이터시트, 핀배열, 회로
K6F4008U2E Family
CMOS SRAM
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology: Full CMOS
Organization: 512K x8 bit
Power Supply Voltage: 2.7~3.3V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 48(36)-TBGA-6.00x7.00
GENERAL DESCRIPTION
The K6F4008U2E families are fabricated by SAMSUNGs
advanced full CMOS process technology. The families support
industrial temperature range and Chip Scale Package for user
flexibility of system design. The families also supports low data
retention voltage for battery back-up operation with low data
retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6F4008U2E-F Industrial(-40~85°C)
2.7~3.3V
1. The parameter is measured with 30pF test load.
2. Typical value are at VCC=3.0V, TA=25°C and not 100% tested.
Speed
551)/70ns
Power Dissipation
Standby Operating
(ISB1, Typ.) (ICC1, Max)
PKG Type
1.0µA2)
2mA
48(36)-TBGA-6.00x7.00
PIN DESCRIPTION
1 23456
A A0 A1 CS2 A3 A6 A8
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
B I/O5 A2 WE A4 A7 I/O1
C I/O6
DNU A5
I/O2
D VSS
E VCC
48(36)-TBGA
VCC
VSS
F I/O7
A18 A17
I/O3
G I/O8 OE CS1 A16 A15 I/O4
H A9 A10 A11 A12 A13 A14
Row
Address
Row
select
Memory
Cell
Array
I/O1
Data
I/O Circuit
I/O8
cont
Column select
Data
cont
Column Address
Name
Function
Name
Function
CS1, CS2 Chip Select Inputs I/O1~I/O8 Data Inputs/Outputs
OE Output Enable Input Vcc Power
WE Write Enable Input
Vss Ground
A0~A18 Address Inputs
DNU Do Not Use
CS1
CS2 Control
logic
WE
OE
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
- 2 - Revision 1.0
March 2001




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K6F4008U2E-F

512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM - Samsung semiconductor