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PDF HN27C256HG Data sheet ( Hoja de datos )
| Número de pieza | HN27C256HG | |
| Descripción | 32768-word x 8-bit CMOS UV Erasable and Programmable ROM | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HN27C256HG Series
32768-word × 8-bit CMOS UV Erasable and Programmable
ROM
ADE-203-
Maintenance only
Rev. 0.0
Dec. 1, 1995
Description
The Hitachi HN27C256HG is a 256-kbit ultraviolet erasable and electrically programmable ROM,
featuring sub-100-ns access times. The HN27C256HG realizes access time of 70 ns and 85 ns,
employing the advanced fine process and high speed circuitry technique. The timing conditions such as
access time or output hold time are designed as same as our byte-wide SRAMs’, allowing to use with
SRAMs on the same memory board by the same read timings. So its board design in 16-bit
microprocessor systems is easy. Also, the HN27C256HG realizes faster programming time than our
conventional 256-kbit EPROM by Hitachi’s Fast High-Reliability Programming Algorithm. Pin
arrangement, pin configuration and programming voltage are compatible with our 256-kbit EPROM
series, therefore existing programmers can be used with the HN27C256HG.
Features
• High speed: Access time 70/85 ns (max)
• Low power dissipation
Active mode: 30 mW (typ) (f = 1 MHz)
• High reliability and fast programming
Programming voltage: +12.5 V DC
Fast High-Reliability Programming Algorithm available
• Device identifier mode
Manufacturer code and device code
Ordering Information
Type No.
HN27C256HG-70
HN27C256HG-85
Access Time
70 ns
85 ns
Package
600-mil 28-pin cerdip (DG-28)
Note: This device is not available for new application.
1 page  
Read Operation
HN27C256HG Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VPP = VCC)
Parameter
Symbol Min Typ Max Unit Test Conditions
Input leakage current
I LI
——2
µA Vin = 0 V to VCC
Output leakage current
I LO
—
—
2
µA Vout = 0 V to VCC
VPP current
IPP1 —
1
100 µA
VPP = 5.5 V
Standby VCC current
I SB
—
—
15
mA CE = VIH
Operating VCC current
I CC1
—
—
30
mA CE = VIL, Iout = 0 mA
I CC2
—
—
50
mA f = 15 MHz, Iout = 0 mA
I CC3
—
5
15 mA f = 1 MHz, Iout = 0 mA
Input low voltage*3
VIL
–0.3*1
—
0.8 V
Input high voltage*3
VIH 2.2 —
VCC + 1.0*2 V
Output low voltage
VOL — — 0.45 V
IOL = 2.1 mA
Output high voltage
VOH1
2.4
—
—
V
IOH = –1.0 mA
VOH2
VCC – 0.7 —
—
V
IOH = –100 µA
Notes: 1. VIL min = –1.0 V for pulse width ≤ 50 ns.
2. VIH max = VCC + 1.5 V for pulse width ≤ 20 ns.
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3. Only defined for DC function test. VIL max = 0.45 V, VIH min = 2.4 V for AC function test.
5
5 Page 
HN27C256HG Series
High Performance Programming
This device can be applied the high performance programming algorithm shown in following flowchart.
This algorithm is as same as our 256-kbit EPROM series, so existing programmers can be used with this
device. This algorithm allows to obtain faster programming time without any voltage stress to the device
nor deterioration in reliability of programmed data.
START
SET PROG./VERIFY MODE
VPP = 12.5 ± 0.5 V, VCC = 6.0 ± 0.25 V
Address = 0
n=0
Address + 1 Address
n+1 n
Program tPW = 1.0 ms ± 5%
VERIFY
NOGO
GO
Program tOPW = 3n ms
NO LAST
Address?
YES
SET READ MODE
VCC = 5.0 V ± 0.5 V, VPP = VCC
READ
All Address
GO
END
NOGO
n = 25
YES
NO
FAIL
11
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet HN27C256HG.PDF ] | |
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