파트넘버.co.kr NV25M01 데이터시트 PDF


NV25M01 반도체 회로 부품 판매점

1 Mb SPI Serial CMOS EEPROM



ON Semiconductor 로고
ON Semiconductor
NV25M01 데이터시트, 핀배열, 회로
NV25M01
Product Preview
1 Mb SPI Serial CMOS
EEPROM
Description
The NV25M01 is a 1M−bit Serial CMOS EEPROM device
internally organized as 128Kx8 bits. It features a 256−byte page write
buffer and supports the Serial Peripheral Interface (SPI) protocol. The
device features software and hardware write protection, including
partial as well as full array protection.
On−Chip ECC (Error Correction Code) makes the device suitable
for high reliability applications.
Features
10 MHz Capability
1.8 V to 5.5 V Supply Voltage Range
SPI Modes (0,0) & (1,1)
256−byte Page Write Buffer
Identification Page with Permanent Write Protection
Self−timed Write Cycle
Hardware and Software Protection
Block Write Protection –
Protect 1/4, 1/2 or Entire EEPROM Array
Low Power CMOS Technology
1,000,000 Program/Erase Cycles
100 Year Data Retention
Automotive Grade 2 Temperature Range (105°C)
8 lead SOIC and TSSOP Packages
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
VCC
SI
CS
WP
HOLD
SCK
NV25M01
SO
VSS
Figure 1. Functional Symbol
www.onsemi.com
SOIC−8
DW SUFFIX
CASE 751BD
TSSOP−8
DT SUFFIX
CASE 948AL
PIN CONFIGURATIONS
CS 1
SO
WP
VSS
VCC
HOLD
SCK
SI
SOIC (DW),
TSSOP (DT)
(Top View)
Pin Name
CS
SO
WP
VSS
SI
SCK
HOLD
VCC
PIN FUNCTION
Function
Chip Select
Serial Data Output
Write Protect
Ground
Serial Data Input
Serial Clock
Hold Transmission Input
Power Supply
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. P1
1
Publication Order Number:
NV25M01/D


NV25M01 데이터시트, 핀배열, 회로
NV25M01
MARKING DIAGRAMS
W25M1A
AYMXXX
(SOIC−8)
W25M1A = Specific Device Code
A = Assembly Location
Y = Production Year (Last Digit)
M = Production Month (1−9, O, N, D)
XXX = Last Three Digits of
XXX = Assembly Lot Number
TM1A
AYMXXX
G
(TSSOP−8)
TM1A
A
Y
M
XXX
G
= Specific Device Code
= Assembly Location
= Production Year (Last Digit)
= Production Month (1−9, O, N, D)
= Last Three Digits of
= Assembly Lot Number
= Pb−Free Microdot
Table 1. MAXIMUM RATINGS
Parameter
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min Units
NEND (Note 3) Endurance
1,000,000
Program / Erase Cycles
TDR Data Retention
100 Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, VCC = 5 V, 25°C
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D. C. OPERATING CHARACTERISTICS (VCC = 1.8 V to 5.5 V, TA = −40°C to +105°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min Max Units
ICCR
ICCW
Supply Current
(Read Mode)
Supply Current
(Write Mode)
SO open
VCC = 1.8 V, fSCK = 5 MHz
VCC = 2.5 V, fSCK = 10 MHz
VCC = 5.5 V, fSCK = 10 MHz
1.2 mA
1.8 mA
3 mA
3 mA
ISB Standby Current
VIN = GND or VCC, CS = VCC
3 mA
IL Input Leakage Current
VIN = GND or VCC
−2 2 mA
ILO Output Leakage Current
CS = VCC, VOUT = GND or VCC
−2 2 mA
VIL Input Low Voltage
VCC 2.5 V
−0.5
0.3VCC
V
VCC < 2.5 V
−0.5
0.25VCC
VIH Input High Voltage
VCC 2.5 V
0.7VCC VCC + 0.5
V
VCC < 2.5 V
0.75VCC VCC + 0.5
VOL Output Low Voltage
VCC 2.5 V, IOL = 3.0 mA
0.4 V
VCC < 2.5 V, IOL = 150 mA
0.2
VOH Output High Voltage
VCC 2.5 V, IOH = −1.6 mA
VCC − 0.8
V
VCC < 2.5 V, IOH = −100 mA
VCC − 0.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2




PDF 파일 내의 페이지 : 총 13 페이지

제조업체: ON Semiconductor

( onsemi )

NV25M01 cmos

데이터시트 다운로드
:

[ NV25M01.PDF ]

[ NV25M01 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


NV25M01

1 Mb SPI Serial CMOS EEPROM - ON Semiconductor