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MIS Chip Capacitors



Skyworks Solutions 로고
Skyworks Solutions
SC02201518 데이터시트, 핀배열, 회로
www.DataSheet4U.com
DATA SHEET
SC Series: MIS Chip Capacitors
Features
Readily available from stock
High reliability silicon oxide–nitride dielectric
Low loss—typically 0.04 dB in a 50 system
Operation through 26 GHz
Wide temperature operation
Available lead (Pb)-free, RoHS-compliant, and Green
Description
Skyworks MIS Chip Capacitors are available in a wide range of
sizes and capacitance values. They are frequently used in
applications requiring DC blocking, RF bypassing, or as a fixed
capacitance tuning element in filters, oscillators, and matching
networks. The devices have a dielectric composed of thermally
grown silicon dioxide over which a layer of silicon nitride is
deposited. This dielectric possesses a low temperature coefficient
of capacitance and very high insulation resistance. The devices
also exhibit excellent long-term stability making them suitable for
high-reliability applications. The capacitors have a high dielectric
breakdown which permits the use of thin dielectrics resulting in
large capacitance per unit area. The temperature coefficient is
less that 50 ppm/°C, and operation is suitable from -65 °C to
200 °C. Compared to ceramic capacitors, Skyworks MIS chip
capacitors offer higher Q, and a lower insertion loss of 0.04 dB,
in a 50 system. Insulation resistance is greater than
105 M . To accommodate high-volume automated assembly
methods, wafers can be supplied on expanded film frame. To
reduce cost, chips can be supplied packaged in vials with
sample testing only. Packaging in waffle packs with 100%
electrical test and visual inspection is available.
NEW Skyworks Green products are lead (Pb)-free, RoHS
(Restriction of Hazardous Substances)-compliant,
conform to the EIA/EICTA/JEITA Joint Industry Guide
(JIG) Level A guidelines, and are free from antimony
trioxide and brominated flame retardants.
Electrical Specifications
Capacitance range: 0.8 to 1000 pF
Temperature coefficient: 50 ppm/°C typical
Capacitance tolerance: ±20%
Operating temperature: -65 °C to +200 °C
Dielectric withstanding voltage: 100 V
Insulation resistance: 105 megohms typical
Leakage current: typ. < 1 nA
Absolute Maximum Ratings
Characteristic
Value
Operating temperature range (TOP)
-65 °C to +200 °C
Storage temperature range (TSTG)
-65 °C to +200 °C
Dielectric withstanding voltage
100 V
Performance is guaranteed only under the conditions listed in the specifications table and is
not guaranteed under the full range(s) described by the Absolute Maximum specifications.
Exceeding any of the absolute maximum/minimum specifications may result in permanent
damage to the device and will void the warranty.
CAUTION: Although this device is designed to be as robust as
possible, ESD (Electrostatic Discharge) can damage
this device. This device must be protected at all times
from ESD. Static charges may easily produce poten-
tials of several kilovolts on the human body or
equipment, which can discharge without detection.
Industry-standard ESD precautions must be employed
at all times.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
200136 Rev. C • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • August 2, 2006
1


SC02201518 데이터시트, 핀배열, 회로
www.DataSheet4U.com
DATA SHEET • SC SERIES
Typical SPDT Switch
Bias
Output
C2
Bias
C3
Input 1
Input 2
C1 D1 D2 C4
C2, C3 — Chip MIS capacitor
C1, C4 — Chip or beam-lead MIS capacitor
D1, D2 DSG9500 beam-lead PIN diode
Example
Part Number Structure — SCXXXXYYZZ
where:
SC = Silicon Capacitor
XXXX = Capacitance (pF)
YY = Square Contact Size (mils)
ZZ = Square Chip Size (mils)
Electrical Specifications
Part Number
SC00080912
SC00120912
SC00180912
SC00260912
SC00380912
SC00560912
SC00680912
SC00820710
SC00821518
SC01000710
SC01000912
SC01001518
SC01501518
SC02201518
SC03301518
SC04701518
SC06801518
SC10002430
SC33303440
SC50004450
SC99906068
Capacitance
(20%) pF
0.8
1.2
1.8
2.6
3.8
5.6
6.8
8.2
8.2
10
10
10
15
22
33
47
68
100
333
500
1000
Chip Dimensions
(1 mil)
9 mil pad/12 mil chip
9 mil pad/12 mil chip
9 mil pad/12 mil chip
9 mil pad/12 mil chip
9 mil pad/12 mil chip
9 mil pad/12 mil chip
9 mil pad/12 mil chip
7 mil pad/10 mil chip
15 mil pad/18 mil chip
7 mil pad/10 mil chip
9 mil pad/12 mil chip
15 mil pad/18 mil chip
15 mil pad/18 mil chip
15 mil pad/18 mil chip
15 mil pad/18 mil chip
15 mil pad/18 mil chip
15 mil pad/18 mil chip
24 mil pad/30 mil chip
34 mil pad/40 mil chip
44 mil pad/50 mil chip
60 mil pad/68 mil chip
ZZ
± 0.001˚
YY
± 0.001˚
Chip Thickness
0.005
± 0.001˚
Performance Data
Tests on typical MIS capacitors at L and S band show insertion
loss to be 1/2 to 1/3 that of equivalent ceramic-type capacitors,
without any of the associated resonance problems. Power tests
indicate that the only limitation is the actual breakdown voltage
of the device (see data section). A typical insertion loss versus
frequency graph is shown in Figure 1. This data is taken from
an actual test circuit with series mounted beam-lead or chip
capacitors on a 50 microstrip transmission line. The apparent
higher loss at lower frequencies on the lower capacitance units
is strictly due to the capacitive reactance of the capacitor.
10.0 1 pF
1.0
8.2 pF
0.10
47 pF
100 pF
100 pF
1–47 pF
0.01
2
6 10
Frequency (GHz)
14
18
Figure 1. Typical Insertion
Loss vs. Frequency (50 System)
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com
2 August 2, 2006 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200136 Rev. C




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SC02201518

MIS Chip Capacitors - Skyworks Solutions



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Mis Chip Capacitors - Skyworks Solutions