파트넘버.co.kr NT512D72S8PB0G 데이터시트 PDF


NT512D72S8PB0G 반도체 회로 부품 판매점

184 pin Unbuffered DDR DIMM



ETC 로고
ETC
NT512D72S8PB0G 데이터시트, 핀배열, 회로
NT512D64S8HB1G / NT512D64S8HB1GY / NT512D64S8HB0G
NT256D64S88B1G / NT256D64S88B1GY NT256D64S88B0G
NT128D64SH4B1G / NT512D72S8PB0G (ECC) / NT256D72S89B0G (ECC)
512MB, 256MB and 128MB
PC3200, PC2700 and PC2100
Unbuffered DDR DIMM
184 pin Unbuffered DDR DIMM
www.daBtaassheedeto4nu.DcoDmR400/333/266 256M bit B Die device
Features
• 184 Dual In-Line Memory Module (DIMM)
• Unbuffered DDR DIMM based on 256M bit die B device,
organized as either 32Mbx8 or 16Mbx16
• Performance:
PC3200 PC2700 PC2100
Speed Sort
5T 6K 75B Unit
DIMM CAS Latency
3 2.5 2.5
fCK Clock Frequency
200 166 133 MHz
tCK Clock Cycle
5 6 7.5 ns
fDQ DQ Burst Frequency 400 333 266 MHz
• Intended for 133, 166 and 200 MHz applications
• Inputs and outputs are SSTL-2 compatible
• VDD = VDDQ = 2.5V ± 0.2V (2.6V ± 0.1V for PC3200)
• SDRAMs have 4 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• DRAM DLL aligns DQ and DQS transitions with clock transitions
• Address and control signals are fully synchronous to positive
clock edge
• Programmable Operation:
- DIMM CAS Latency: 2, 2.5, 3
- Burst Type: Sequential or Interleave
- Burst Length: 2, 4, 8
- Operation: Burst Read and Write
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 7.8 µs Max. Average Periodic Refresh Interval
• Serial Presence Detect EEPROM
• Gold contacts
• SDRAMs are packaged in TSOP packages
• “Green” packaging – lead free
Description
NT512D64S8HB0G, NT512D64S8HB1G, NT512D64S8HB1GY, NT512D72S8PB0G, NT256D64SH88B0G, NT256D64SH88B1G,
NT256D64SH88B1GY, NT256D72S89B0G and NT128D64SH4B1G are unbuffered 184-Pin Double Data Rate (DDR) Synchronous DRAM
Dual In-Line Memory Modules (DIMM). NT512D64S8HB1GY and NT256D64SH88B1GY are packaged using lead free technology.
NT512D64S8HB0G, NT512D64S8HB1G and NT512D64S8HB1GY are 512MB modules organized as dual ranks using sixteen 32Mx8
TSOP devices. NT512D72S8PB0G has ECC and is organized as dual ranks using eighteen 32Mx8 TSOP devices. NT256D64SH88B0G,
NT256D64SH88B1G and NT256D64SH88B1GY are 256MB modules organized as single rank using eight 32Mx8 TSOP devices.
NT256D72S89B0G has ECC and is organized as single rank using nine 32Mx8 TSOP devices. NT128D64SH4B1G are 128MB modules,
organized as single rank using four 16Mx16 TSOP devices.
Depending on the speed grade, these DIMMs are intended for use in applications operating up to 200 MHz clock speeds and achieves
high-speed data transfer rates of up to 400 MHz. Prior to any access operation, the device CAS latency and burst type/ length/operation
type must be programmed into the DIMM by address inputs and I/O inputs BA0 and BA1 using the mode register set cycle.
The DIMM uses a serial EEPROM and through the use of a standard IIC protocol the serial presence-detect implementation (SPD) can be
accessed. The first 128 bytes of the SPD data are programmed with the module characteristics as defined by JEDEC.
REV 2.2
Aug 3, 2004
Preliminary
1
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.


NT512D72S8PB0G 데이터시트, 핀배열, 회로
NT512D64S8HB1G / NT512D64S8HB1GY / NT512D64S8HB0G
NT256D64S88B1G / NT256D64S88B1GY NT256D64S88B0G
NT128D64SH4B1G / NT512D72S8PB0G (ECC) / NT256D72S89B0G (ECC)
Unbuffered DDR DIMM
Ordering Information
www.datasheet4Pua.crtoNmumber
Organization
NT512D72S8PB0G-5T
64Mx72
Speed
NT512D64S8HB1G-5T
NT512D64S8HB1GY-5T
(lead free)
NT256D72S890G-5T
NT256D64S88B1G-5T
NT256D64S88B1GY-5T
(lead free)
NT128D64SH4B1G-5T
64Mx64
32Mx72
PC3200 200MHz (5ns @ CL = 3)
DDR400
3-3-3 166MHz (6ns @ CL = 2.5)
32Mx64
16Mx64
NT512D64S8HB1G-6K
NT512D64S8HB1GY-6K
(lead free)
NT256D64S88B1GY-6K
(lead free)
NT256D64S88B0G-6K
64Mx64
32Mx64
PC2700 166MHz (6ns @ CL = 2.5)
DDR333
2.5-3-3 133MHz (7.5ns @ CL = 2)
NT128D64SH4B1G-6K
16Mx64
NT512D64S8HB0G-75B
NT256D64S88B0G-75B
NT128D64SH4B1G-75B
64Mx64
32Mx64
PC2100 133MHz (7.5ns @ CL = 2.5)
DDR266B
2.5-3-3 100MHz (10ns @ CL = 2)
16Mx64
Power Leads
2.6V
Gold
2.5V
For the closest sales office or information, please visit: www.nanya.com
Nanya Technology Corporation
Hwa Ya Technology Park 669
Fu Hsing 3rd Rd., Kueishan,
Taoyuan, 333, Taiwan, R.O.C.
Tel: +886-3-328-1688
REV 2.2
Aug 3, 2004
Preliminary
2
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.




PDF 파일 내의 페이지 : 총 28 페이지

제조업체: ETC

( etc )

NT512D72S8PB0G buffer

데이터시트 다운로드
:

[ NT512D72S8PB0G.PDF ]

[ NT512D72S8PB0G 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


NT512D72S8PB0G

184 pin Unbuffered DDR DIMM - ETC