|
STMicroelectronics |
® 74V1T70
s HIGH SPEED: tPD = 5.5 ns (TYP.) at VCC = 5V
s LOW POWER DISSIPATION:
ICC = 1 µA (MAX.) at TA = 25 oC
s COMPATIBLE WITH TTL OUTPUTS:
VIH = 2V (MIN), VIL = 0.8V (MAX)
s POWER DOWN PROTECTION ON INPUT
s SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 8 mA (MIN)
s BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
s OPERATING VOLTAGE RANGE:
VCC (OPR) = 4.5V to 5.5V
s IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1T70 is an advanced high-speed CMOS
SINGLE BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C2MOS
technology.
SINGLE BUFFER
PRELIMINARY DATA
S
(SOT23-5L)
C
(SC-70)
ORDER CODE:
74V1T70S
74V1T70C
The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on input and 0
to 7V can be accepted on input with no regard to
the supply voltage. This device can be used to
interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
October 1999
1/7
74V1T70
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1
2
4
3
5
S Y M B OL
N.C.
1A
1Y
GND
VCC
NAME AND FUNCTION
Not Connected
Data Input
Data Output
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
H
Y
L
H
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC Supply Voltage
-0.5 to +7.0
V
VI DC Input Voltage
-0.5 to +7.0
V
VO DC Output Voltage
-0.5 to VCC + 0.5
V
IIK DC Input Diode Current
- 20 mA
IOK DC Output Diode Current
± 20 mA
IO DC Output Current
± 25 mA
ICC or IGND DC VCC or Ground Current
± 50 mA
Tstg Storage Temperature
-65 to +150
oC
TL Lead Temperature (10 sec)
260 oC
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC Supply Voltage
VI Input Voltage
VO Output Voltage
Top Operating Temperature
dt/dv Input Rise and Fall Time (see note 1) (VCC = 5.0 ± 0.5V)
1)VIN from0.8V to 2 V
Valu e
4.5 to 5.5
0 to 5.5
0 to VCC
-40 to +85
0 to 20
Unit
V
V
V
oC
ns/V
2/7
|