74LVC2G07GM 판매점 - Buffers with open-drain outputs

Philips Semiconductors

Buffers with open-drain outputs

Product speciﬁcation

74LVC2G07

FEATURES

• Wide supply voltage range from 1.65 V to 5.5 V

• 5 V tolerant input/output for interfacing with 5 V logic

• High noise immunity

• Complies with JEDEC standard:

– JESD8-7 (1.65 V to 1.95 V)

– JESD8-5 (2.3 V to 2.7 V)

– JESD8B/JESD36 (2.7 V to 3.6 V).

• −24 mA output drive (VCC = 3.0 V)

• CMOS low power consumption

• Latch-up performance exceeds 250 mA

• Direct interface with TTL levels

• Inputs accept voltages up to 5 V

• Multiple package options

• ESD protection:

– HBM EIA/JESD22-A114-B exceeds 2000 V

– MM EIA/JESD22-A115-A exceeds 200 V.

• Specified from −40 °C to +85 °C and −40 °C to +125 °C.

DESCRIPTION

The 74LVC2G07 is a high-performance, low-power,

low-voltage, Si-gate CMOS device superior to most

advanced CMOS compatible TTL families.

Input can be driven from either 3.3 V or 5 V devices. This

feature allows the use of this device in a mixed

3.3 V and 5 V environment.

Schmitt trigger action at all inputs makes the circuit tolerant

for slower input rise and fall time.

This device is fully specified for partial power-down

applications using Ioff. The Ioff circuitry disables the output,

preventing the damaging backflow current through the

device when it is powered down.

The 74LVC2G07 provides two non-inverting buffers.

The output of the device is an open drain and can be

connected to other open-drain outputs to implement

active-LOW wired-OR or active-HIGH wired-AND

functions.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C.

SYMBOL

tPLZ/tPZL

CPD

PARAMETER

CONDITIONS

TYPICAL UNIT

propagation delay input nA to output nY

input capacitance

VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ

VCC = 2.5 V; CL = 30 pF; RL = 500 Ω

VCC = 2.7 V; CL = 50 pF; RL = 500 Ω

VCC = 3.3 V; CL = 50 pF; RL = 500 Ω

VCC = 5.0 V; CL = 50 pF; RL = 500 Ω

3.5

2.4

2.3

2.6

1.5

2.5

power dissipation capacitance per gate VCC = 3.3 V; notes 1 and 2

6.5 pF

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts;

N = total load switching outputs;

∑(CL × VCC2 × fo) = sum of outputs.

2. The condition is VI = GND to VCC.

2004 Sep 08

74LVC2G07GM 반도체 회로 부품 판매점

Buffers with open-drain outputs

국내 전력반도체 판매점

일반적인 전자부품 판매점

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