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BCW66H 반도체 회로 부품 판매점

NPN General Purpose Amplifier



Galaxy Electrical 로고
Galaxy Electrical
BCW66H 데이터시트, 핀배열, 회로
BL Galaxy Electrical
NPN General Purpose Amplifier
FEATURES
z For general AF appilications.
z High current gain.
Pb
Lead-free
z Low collector-emitter saturation voltage.
z Complementary types:BCW67,BCW68(PNP)
APPLICATIONS
z General purpose medium power amplifier.
z Switching appilication.
Production specification
BCW65/66
SOT-23
ORDERING INFORMATION
Type No.
Marking
BCW65A/B/C
BCW66F/G/H
EA/EB/EC
EA/EB/EC
Package Code
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
BCW65
BCW66
VCBO
Collector-Base Voltage
32 45
VCEO
Collector-Emitter Voltage
60 75
VEBO
Emitter-Base Voltage
55
IC
Collector Current -Continuous
800
PC
Collector Dissipation
330
Tj,Tstg
Junction and Storage Temperature -65to+150
Unit
V
V
V
mA
mW
Document number: BL/SSSTC106
Rev.A
www.galaxycn.com
1


BCW66H 데이터시트, 핀배열, 회로
BL Galaxy Electrical
Production specification
NPN General Purpose Amplifier
BCW65/66
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
BCW65
BCW66
Collector-emitter breakdown voltage
BCW65
BCW66
V(BR)CBO
V(BR)CEO
Emitter-base breakdown voltage
Collector cut-off current
BCW65
BCW66
V(BR)EBO
ICBO
Emitter cut-off current
IEBO
DC current gain
A/F
B/G hFE
C/H
IC=10μA IE=0
IC=10mA IB=B 0
IE=10μA IC=0
VCB=32V IE=0
VCB=45V IE=0
VEB=4V IC=0
VCE=5V IC=2mA
60
75
32
45
5
100
160
250
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
IC=100mA IB=B 10mA
IC=500mA IB=B 50mA
IC=100mA IB=B 10mA
IC=500mA IB=B 50mA
VCE=5V IC=50mA
f=20MHz
170
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
V
V
V
20
20
nA
20 nA
250
400
630
0.3
0.7
V
1.25
2
V
MHz
Document number: BL/SSSTC106
Rev.A
www.galaxycn.com
2




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