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Fairchild Semiconductor |
BC337-16
BC337-25
Discrete POWER & Signal
Technologies
E
BC
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced from
Process 12. See TN3019A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCES
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
45
50
5.0
1.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
BC337-16 / BC337-25
625
5.0
83.3
200
Units
V
V
V
A
°C
Units
mW
mW /°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
33716-25, Rev B
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V (B R )C E O
V (B R )C E S
V (B R )E B O
ICBO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 10 mA, IB = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCB = 20 V, IE = 0, TA = +25 °C
VCB = 20 V, IE = 0, TA = +150
°C
VEB = 5.0 V, IC = 0
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 1.0 V, IC = 100 mA
337-16
337-25
VCE = 1.0 V, IC = 500 mA
IC = 500 mA, IB = 50 mA
VCE = 1.0 V, IC = 500 mA
45
50
5.0
100
160
40
100
5.0
10
250
400
0.7
1.2
V
V
V
nA
µA
µA
V
V
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