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XP1050-QJ 반도체 회로 부품 판매점

Power Amplifier



MA-COM 로고
MA-COM
XP1050-QJ 데이터시트, 핀배열, 회로
XP1050-QJ
2.5 W Power Amplifier
7.1 - 8.5 GHz
Rev. V1
Features
 15.5 dB Small Signal Gain
 47 dBm Third Order Intercept Point (OIP3)
 2 W P1dB
 Integrated Power Detector
 Lead-Free 6 mm 24-lead QFN Package
 RoHS* Compliant and 260°C Reflow Compatible
Functional Schematic
Description
The XP1050-QJ is a packaged linear power
amplifier that operates from 7.1-8.5 GHz. The device
provides 15.5 dB gain and 47 dBm Output Third
Order Intercept Point (OIP3). The packaged
amplifier comes in an industry standard, fully molded
6 mm QFN package and is comprised of a two stage
power amplifier with an integrated, temperature
compensated on-chip power detector. The device
includes on-chip ESD protection structures and DC
by-pass capacitors to ease the implementation and
volume assembly of the packaged part.
The device is specifically designed for use in 7 and 8
GHz Point-to-Point radio applications.
External DC blocks are required. See the reliability
note on page 3 for more information.
Ordering Information1,2
Part Number
Package
XP1050-QJ-0G00
bulk quantity
XP1050-QJ-0G0T
tape and reel
XP1050-QJ-EV1
evaluation module
1. Reference Application Note M513 for reel size information.
2. All sample boards include 5 loose parts.
Pin Configuration3
Pin No.
Pin Name
Function
1
2-3
4
5
6
7-11
12
13
14
15
16-17
18
19-24
254
VD1
N/C
RFIN
VG1
VG2
N/C
GND
VREF
VDET
RFOUT
N/C
VD2
N/C
Pad
Drain 1 Bias
No Connection
RF Input
Gate 1 Bias
Gate 2 Bias
No Connection
Ground
Power Det. Ref.
Power Detector
RF Output
No Connection
Drain 2 Bias
No Connection
Ground
3. It is recommended to connect unused pins to ground.
4. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298


XP1050-QJ 데이터시트, 핀배열, 회로
XP1050-QJ
2.5 W Power Amplifier
7.1 - 8.5 GHz
Rev. V1
Electrical Specifications: Freq: 7.1 - 8.5 GHz, VDD = 7 V, IDQ5 = 1350 mA, TA = +25C
Parameter
Gain @ 6 dBm PIN
Input Return Loss
Units
dB
dB
Min.
13.5
Typ.
15.5
10
Max.
18.5
Output Return Loss
dB — 8 —
P1dB
Psat6
dBm
33
dBm
34
Output IP3 @ 6 dBm PIN
dBm
43.5
47
Delta VDET (VDET - VREF) @ 6 dBm PIN, 8.5 GHz
V — -0.88 —
Detector Bias Voltage
VDC
5
Gate Bias Voltage (VGG1,2)
VDC
-0.7
5. Adjust VGG1 and VGG2 between –1.4 and –0.4 V to achieve specified IDQ. VGG1 and VGG2 should be the same voltage.
6. For reference only. Large signal operation is only recommended under pulsed conditions. Keep output power below P1dB for C.W.
operation.
Maximum Operating Ratings7,8,9
Parameter
Input Power
Drain Supply Voltage
Junction Temperature10
Operating Temperature
Storage Temperature
Absolute Maximum
+24 dBm
+8 Volts
+160 °C
-40°C to +85°C
-65°C to +150°C
7. Exceeding any one or combination of these limits may
cause permanent damage to this device.
8. M/A-COM Technology Solutions does not recommend
sustained operation near these survivability limits.
9. Operating at nominal conditions with TJ 160°C will ensure
MTTF > 1 x 106 hours.
10. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN))
Typical thermal resistance (ӨJC) = 6.8°C/W
a) For TC = 25°C,
TJ = 88°C @ 7 V, 1350 mA, POUT = 21.5 dBm, PIN = 6 dBm
b) For TC = 85°C,
TJ =149°C @ 7 V, 1350 mA, POUT = 20 dBm, PIN = 6 dBm
Absolute Maximum Ratings11,12
Parameter
Supply Gate Voltage
Supply Current (ID1)
Supply Current (ID2)
Detector Pin
Detector Ref Pin
Absolute Max.
-2.5 V
600 mA
1200 mA
6V
6V
Continuous Power
Dissipation @ 85ºC
11.2 W
Junction Temperature
175ºC
11. Channel temperature directly affects a device’s MTTF.
Channel temperature should be kept as low as possible to
maximize lifetime.
12. For saturated performance it recommended that the sum of
(2*VDD + abs(VGG)) <17
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
class 1A devices.
2
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298




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XP1050-QJ

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