파트넘버.co.kr SXB4089Z 데이터시트 PDF


SXB4089Z 반도체 회로 부품 판매점

MEDIUM POWER HBT AMPLIFIER



RF Micro Devices 로고
RF Micro Devices
SXB4089Z 데이터시트, 핀배열, 회로
SXB4089Z
400MHz to
2500MHz ½W
Medium Power
InGap/GaAs
HBT Amplifier
SXB4089Z
400MHz to 2500MHz ½W MEDIUM POWER
InGaP/GaAs HBT AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunc-
tion bipolar transistor (HBT) MMIC housed in low-cost, surface-mountable
plastic package. These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 400MHz to 2500MHz cellular,
ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal
choice for multi-carrier as well as digital applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Typical IP3, P1dB, Gain
50
45 OIP3
40 P1dB
35 Gain
30
25
20
15
10
5
0
880 MHz
1960 MHz
2140 MHz
Features
On-Chip Active Bias Control,
Single 5V Supply
High Output 3rd Order
Intercept:
+45dBm Typ.
High P1dB: +28dBm Typ.
High Gain: +20dB at 880MHz
Low RTH: 25°C/W Typ.
Robust 2000V ESD, Class 2
Applications
WCDMA, PCS, Cellular
Systems
Multi-Carrier Applications
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
18.0
20.0
22.0
dBm
880MHz
15.0
dBm
1960MHz
12.5
14.0
15.5
dBm
2140MHz
Output Power at 1dB Compression,
27.5
dBm
880MHz
27.5
dBm
1960MHz
26.0
27.5
dBm
2140MHz
Output Third Order Intercept Point
41.5
43.5
dBm
880MHz
44.5
dBm
1960MHz
42.5
44.5
dBm
2140MHz
Noise Figure
5.6 dB 880MHz
3.3 dB 1960MHz
3.3 dB 2140MHz
Input VSWR
1.3:1
2.0:1
880MHz
1.3:1
1960MHz
1.3:1
2140MHz
Device Operating Voltage
4.75
5.0
5.25
V
Device Operating Current
235.0
265.0
330.0
mA
Thermal Resistance
25.3
°C/W
junction to backside
Test Conditions: TA = 25°C, Z0 = 50Measured in Application Circuit, POUT per tone = +11dBm, Tone Spacing = 1MHz
DS120821
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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SXB4089Z 데이터시트, 핀배열, 회로
SXB4089Z
Absolute Maximum Ratings
Parameter
Max Device Current (lD)
Max Device Voltage (VD)
Max RF Input Power
Max Dissipated Power
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
ESD Rating - Human Body Model
(HBM)
Rating
500
6
18
2
165
-40 to + 85
150
Class 2
Unit
mA
V
dBm
W
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Moisture Sensitivity Level
MSL2
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL)/RTH, j - l and TL = TLEAD
880 MHz Application Circuit Data, VCC=5V, ID=270mA
P1dB vs. Frequency
30
25
Gain vs. Frequency
28 23
26 21
24 19
25C
-40C
22
85C
S21_25C
17 S21_-40C
S21_85C
20 15
0.85 0.86 0.87 0.88 0.89 0.9 0.91
0.85 0.86 0.87 0.88 0.89 0.9 0.91
Frequency (GHz)
Frequency (GHz)
2 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120821




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