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PDF SXA-389 Data sheet ( Hoja de datos )
| Número de pieza | SXA-389 | |
| Descripción | MEDIUM POWER GaAs HBT AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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SXA-389(Z)
400MHz to
2500 MHz
¼W Medium
Power GaAs
HBT Amplifier
with Active
Bias
SXA-389(Z)
400MHz to 2500MHz ¼W MEDIUM POWER
GaAs HBT AMPLIFIER WITH ACTIVE BIAS
Package: SOT-89
Product Description
RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipo-
lar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent performance
from wafer to wafer and lot to lot. These amplifiers are specially designed
for use as driver devices for infrastructure equipment in the 400MHz
to2500MHz cellular, ISM, WLL, PCS, W-CDMA applications.
Optimum Technology
Matching® Applied
9 GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Typical IP3, P1dB, Gain
50
45 OIP3
P1dB
40 Gain
35
30
25
20
15
10
5
0
850 MHz
1960 MHz
2140 MHz
2450 MHz
Features
Available in RFMD Green, RoHS
Compliant, and Pb-Free (Z Part
Number)
On-Chip Active Bias Control, Sin-
gle 5V Supply
High Output 3rd Order
Intercept:+42to+44dBm Typ.
High P1dB :+25dBm Typ.
High Gain:+19dB at 850MHz
High Efficiency: Consumes Only
600 mW
Patented High Reliability GaAs
HBT Technology
Surface-Mountable Power Plastic
Package
Applications
W-CDMA, PCS, Cellular Systems
High Linearity IF Amplifiers
Multi-Carrier Applications
Parameter
Small Signal Gain
Output Power at 1dB Compression
Output Third Order Intercept Point
Noise Figure
Input VSWR
Device Operating Current
Operating Dissipated Power
Thermal Resistance
Test Conditions: Z0=50Ω, TA=25°C
Min.
12.5
24.0
39.0
90.0
Specification
Typ.
19.0
14.0
13.5
13.0
25.0
25.0
25.0
25.0
43.0
44.0
42.0
42.0
4.7
5.5
6.0
6.0
1.3:1
1.4:1
1.3:1
1.1:1
115.0
575.0
100
Max.
15.0
122.0
610.0
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
mA
mW
°C/W
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
850 MHz
1960 MHz
2140 MHz
2450 MHz
VCC = 5 V
Condition
junction to backside
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-102231 Rev F
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10
1 page  
SXA-389(Z)
2140MHz Application Cpircuit Data, VCC=5V, ID=120mA (Tuned for Output IP3)
P1dB vs. Frequency
30
28
26
24
22
20
2 .1 1
2.12
2.13
2.14
GHz
2.15
25C
85C
-40C
2.16 2.17
0
-5
-10
-15
-20
-25
-30
2 .1 1
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
S11
S12
S22
2 .1 2
2 .1 3
2 .1 4
GHz
2 .1 5
2 .1 6
2 .1 7
Third Order Intercept vs. Tone Power
Frequency = 2.14 GHz
50
-40C
47 25C
85C
44
41
38
35
0
3 6 9 12
POUT per tone (dBm)
15
Gain vs. Frequency
20
25C
18 85C
-40C
16
14
12
10
2.11
2.12
2.13 2.14
GHz
2.15
2.16
2.17
Third Order Intercept vs. Frequency
(POUT per tone = 11dBm)
50
-40C
47 25C
85C
44
41
38
35
2.11
2.12
2.13 2.14
GHz
2.15
2.16
2.17
2140 MHz Adjacent Channel Power vs.
Channel Output Power
-40
-45
-50
-55
-60
-65
-70
10
11 12 13 14 15
Channel Output Power (dBm)
W-CDMA, 64 DPCH + Overhead
25C
85C
-40C
16 17
EDS-102231 Rev F
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SXA-389.PDF ] | |
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