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PDF SGL0622Z Data sheet ( Hoja de datos )
| Número de pieza | SGL0622Z | |
| Descripción | LOW NOISE MMIC AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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SGL0622ZSGL0622Z
5MHz to 4000MHz LOW NOISE MMIC
AMPLIFIER SILICON GERMANIUM
Package: QFN, 2x2
Product Description
The SGL0622Z is a low noise, high gain MMIC LNA designed for low power
single-supply operation from 2.7V to 3.6V. Its Class-1C ESD protection
and high input overdrive capability ensures rugged performance, while its
integrated active bias circuit maintains robust stable bias over tempera-
ture and process beta variation. The SGL0622Z is internally matched from
5MHz to 4000 MHz and requires only 4 to 5 external biasing components
(DC blocks, bypass caps, inductive choke). The SGL0622Z is fabricated
using highly repeatable Silicon Germanium technology and is housed in a
cost-effective RoHS/WEEE compliant QFN 2x2 minia-
Optimum Technology
Matching® Applied
ture package.
GaAs HBT
Typical Performance
GaAs MESFET
40.0
4.00
InGaP HBT
SiGe BiCMOS
35.0
30.0
Gain
3.50
3.00
Si BiCMOS
SiGe HBT
25.0
20.0
2.50
2.00
GaAs pHEMT
Si CMOS
15.0
10.0
1.50
NF
1.00
Si BJT
5.0
0.50
GaN HEMT
RF MEMS
0.0
100.0
600.0
1100.0 1600.0 2100.0
Frequency (MHz)
2600.0
0.00
3100.0
Features
High Gain=28dB at 1575MHz
Low Noise Figure=1.5dB at
1575 MHz
Low Power Consumption,
10.5mA @ 3.3V
Battery Operation:2.7V to 3.6V
(Active Biased)
Fully Integrated Matching
Class-1C ESD Protection
(>1000V HBM)
High input overdrive capability,
+ 18 dBm
Applications
High Gain GPS Receivers
ISM and WiMAX LNAs
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
25.0
28.0
31.0 dB 1.575GHz
23.0
dB 2.44GHz
14.5
16.5
18.5
dB 3.50GHz
Output Power at 1dB Compression
3.3
5.3
dBm
1.575 GHz
1.5
dBm
2.44 GHz
-1.4
dBm
3.50 GHz
Input Third Order Intercept Point
-16.0
-13.0
dBm
1.575 GHz
-12.0
dBm
2.44 GHz
-8.5
dBm
3.50 GHz
Input Return Loss
12.0
14.0
dB 1.575GHz
12.0
dB 2.44GHz
10.0
dB 3.50GHz
Output Return Loss
6.0 9.5
dB 1.575GHz
14.0
dB 2.44GHz
22.0
dB 3.50GHz
Noise Figure
1.5 1.9 dB 1.575GHz
2.0 dB 2.44GHz
2.8 dB 3.50GHz
Reverse Isolation
-28.0
dB 0.05GHz to 4.0GHz
Thermal Resistance
150
°C/W
junction - lead
Device Operating Current
7.5
10.5
14.5
mA
Test Conditions: VCC=3.3V, ID=10.5mA Typ., IIP3 Tone Spacing=1MHz, POUT per tone=-15dBm, TL=25°C, ZS=ZL=50
DS140404
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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1 page  
SGL0622Z
Pin
1
2
3, 5,
6, 7, 8
4
EPAD
Function
RF OUT/VD
GND
N/A
RF IN
GND
Description
RF output and bias pin. Bias should be supplied to this pin through an external RF choke. (See application cir-
cuit)
Connect to ground per application circuit drawing.
Not Used
RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the application schemat-
ics.
Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for ther-
mal and RF performance. Vias should be located under the EPAD as shown in the recommended land pattern.
Suggested Pad Layout
Nominal Package Dimensions
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
Package Type:
2 x 2 QFN
Part Identification
DS140404
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 6
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| PDF Descargar | [ Datasheet SGL0622Z.PDF ] | |
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