SGB2400 반도체 회로 부품 판매점
DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER
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 RF Micro Devices |
SGB2400DC
to 4GHz Active
Bias SiGe HBT
MMIC Ampli-
fier
SGB2400
DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC
AMPLIFIER
Package: Bare Die
Product Description
RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip
active bias circuitry. The active bias network provides stable current over temperature and pro-
cess Beta variations. The SGB2400 is designed to operate directly from a 3V supply. The
SGB2400 product is designed for high linearity 3V gain block applications that require small
size and minimal external components. The die is internally matched to 50.
RFMD can provide 100% DC screening, visual inspection, and Hi-Rel wafer qualification.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain and Return Loss - SGB2433Z
Packaged Part
25.0
20.0
15.0
10.0
5.0
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
Gain
IRL
ORL
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
Features
High Reliability SiGe HBT
Technology
Robust Class 1C ESD
P1dB = 6.9dBm at 1950MHz
IP3 = 18.0dBm at 1950MHz
Die Size: 0.75mm x 0.70mm
Applications
LO Buffer Amp
RF Pre-driver and RF Receive
Path
Military Communications
Test and Instrumentation
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Frequency of Operation
DC
4000
MHz
Small Signal Gain
19.1
dB Freq = 850MHz
15.7
17.2
18.7
dB Freq = 1950MHz
16.2
dB Freq = 2400MHz
Output Power at 1dB Compression
5.4
7.7
6.9
dBm
dBm
Freq = 850MHz
Freq = 1950MHz
Output IP3
6.2
19.5
dBm
dBm
Freq = 2400MHz
Freq = 850MHz
16.0
18.0
dBm
Freq = 1950MHz
18.0
dBm
Freq = 2400MHz
Input Return Loss
10.0
13.4
dB Freq = 1950MHz
Output Return Loss
10.0
13.6
dB Freq = 1950MHz
Current
21 25 29 mA
Noise Figure
3.5 4.5 dB Freq = 1950MHz
Thermal Resistance
221
°C/W
Junction to lead (33 pkg.)
Test Conditions: Z0 = 50, VCC = 3.0V, ID = 25mA, T = 30°C. OIP3 POUT/TONE = -10dBm with 1MHz tone spacing.
Note: Above data for SGB2433Z packaged part.
DS120619
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 5
SGB2400
Absolute Maximum Ratings
Parameter
Total Current (ID)
Device Voltage (VD)
Power Dissipation
Operating Lead Temperature (TL)
RF Input Power
Storage Temperature Range
Rating
60
5
0.2
-40 to +85
20
-55 to +150
Unit
mA
V
W
°C
dBm
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operating Junction Temp (TJ)
ESD Rating - Human Body Model
(HBM)
+150
Class 1C
°C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the fol-
lowing expression: IDVD < (TJ - TL)/RTH, j-l
Typical Performance of SGB2433Z Packaged Part: VCC = 3V, ID = 25mA, T = 25°C, Z = 50
Parameter
Units 100MHz 500MHz 850MHz 1950MHz
Small Signal Gain
dB 19.7
19.5
19.1
17.2
Output 3rd Order Intercept Point (Note 1) dBm
20.0
19.5
18.0
Output Power at 1dB Compression
dBm
8.3 7.7
6.9
Input Return Loss
dB 25.0
19.9
17.1
13.4
Output Return Loss
dB 20.5
18.9
17.1
13.6
Reverse Isolation
dB 22.4
22.6
22.9
23.7
Noise Figure
dB 3.8 3.2 3.2
3.5
Note 1: OIP3 POUT/TONE = -10dBm with 1MHz tone spacing.
2400MHz
16.2
18.0
6.2
12.7
13.1
23.9
3.9
3500MHz
14.0
10.5
13.0
24.5
4.3
2 of 5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120619
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SGB2400 amplifier
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