파트넘버.co.kr SZM-2066Z 데이터시트 PDF


SZM-2066Z 반도체 회로 부품 판매점

2W POWER AMPLIFIER



RF Micro Devices 로고
RF Micro Devices
SZM-2066Z 데이터시트, 핀배열, 회로
SZM-2066Z
2.4GHz to
2.7GHz 2W
Power Ampli-
SZM-2066Zfier
2.4GHz to 2.7GHz 2W POWER AMPLIFIER
Package: QFN, 6mmx6mm
Product Description
RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor
(HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip
module package. This HBT amplifier is made with InGaP on GaAs device technology
and fabricated with MOCVD for an ideal combination of low cost and high reliability.
This product is specifically designed as a final or driver stage for 802.16 and
802.11b/g equipment in the 2.4GHz to 2.7GHz bands. It can run from a 3V to 5V
supply. The external output match and bias adjustability allows load line optimiza-
tion for other applications or over narrower bands. It features an output power
Optimum Technology detector, on/off power control and high RF overdrive robust-
Matching® Applied ness. A 20dB step attenuator feature can be utilized by switch-
GaAs HBT
ing the second stage Power up/down control.
GaAs MESFET
InGaP HBT
Vcc = 5V
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
RFIN
RFOUT
Si BJT
GaN HEMT
Vbias = 5V
Stage 1
Bias
Stage 2
Bias
Stage 3
Bias
InP HBT
RF MEMS
LDMOS
Pow er
Up/Dow n
Control
Pow er
Detector
Features
P1dB= 33.5dBm at 5V
Three Stages of Gain:37dB
802.11g 54Mb/s Class AB Per-
formance
POUT=26dBm at 2.5% EVM, VCC
5V, 690mA
Active Bias with Adjustable Cur-
rent
On-Chip Output Power Detector
Low Thermal Resistance
Power Up/Down Control <1s
Attenuator Step 20dB at
VPC2 = 0 V
Applications
802.16 WiMAX Driver or Output
Stage
802.11b/g WiFi, WiFi
Parameter
Specification
Min. Typ.
Frequency of Operation
2500
Output Power at 1dB Compression
32.0
33.5
Small Signal Gain
32.2
33.7
EVM 2.5
Third Order Supression
-45.0
Noise Figure
7.7
Worst Case Input Return Loss
7.5 10.5
Worst Case Output Return Loss
12.5
15.5
Output Voltage Range
0.9 to 1.8
Quiescent Current
454 583
Power Up Control Current
4.0
VCC Leakage Current
Thermal Resistance
12.0
Test Conditions: Z0=50, VCC=5V, IQ=583mA, TBP=30°C
Max.
2700
-40.0
659
100
Unit
MHz
dBm
dB
%
dBc
dB
dB
dB
V
mA
mA
A
°C/W
Condition
2.7 GHz
2.7 GHz
2.7GHz, 802.11g 54Mb/s at POUT=26dBm
2.7GHz, POUT=23dBm per tone
2.7 GHz
2.5GHz to 2.7GHz
2.5GHz to 2.7GHz
POUT=10dBm to 33dBm
VCC = 5 V
VPC=5V, IVPC1+ IVPC2+IVPC3
VCC=5V, VPC=0V
junction - lead
DS110620
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 18


SZM-2066Z 데이터시트, 핀배열, 회로
SZM-2066Z
Absolute Maximum Ratings
Parameter
Rating
Unit
VC3 Collector Bias Current (IVC3)
VC2 Collector Bias Current (IVC2)
VC1 Collector Bias Current (IVC1)
****Device Voltage (VD)
Power Dissipation
1500
500
150
9.0
6
mA
mA
mA
V
W
***Max CW RF output Power for
50W continuous long term oper-
ation
30
dBm
Max CW RF output Power for 5026 dBm
output load
Max CW RF Input Power for 10:1
VSWR out load
5 dBm
Storage Temperature Range
-40 to +150
°C
Operating Temp Range (TL)
Operating Junction Temperature (TJ)
ESD Rating - Human Body Model
-40 to +85
+150
1000
°C
°C
V
***With specified application circuit
****No RF Drive
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance with appropriate app circuit (VCC=5V, ICQ=583mA, *802.11g 54Mb/s 64QAM)
Parameter
Unit **2.4 2.5
GHz GHz
Gain @ POUT=26dBm
P1dB
dB 37.5 36.9
dBm
34.6
33.5
POUT @ 2.5% EVM*
Current @ POUT 2.5% EVM*
Input Return Loss
Output Return Loss
Step Attentuation (VPC2=0V)
Test Conditions: **Measured with 2.4GHz to 2.5GHz Application circuit.
dBm 27.0 26.0
mA 703 710
dB
-12.1
-11.5
dB -27 -15.6
dB 27 27
Simplified Device Schematic
2.6
GHz
36.5
33.5
26.0
700
-10.8
-28
26
2.7
GHz
34.6
33.9
26.5
712
-10.5
-18.5
25
2 of 18
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS110620




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SZM-2066Z amplifier

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