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BGA3018 반도체 회로 부품 판매점

1 GHz 18 dB gain wideband amplifier MMIC



NXP Semiconductors 로고
NXP Semiconductors
BGA3018 데이터시트, 핀배열, 회로
BGA3018
1 GHz 18 dB gain wideband amplifier MMIC
Rev. 3 — 26 September 2013
Product data sheet
1. Product profile
1.1 General description
The BGA3018 MMIC is a wideband amplifier with internal biasing. It is designed
specifically for high linearity CATV line extenders and drop amplifiers over a frequency
range of 5 MHz to 1006 MHz. The LNA is housed in a lead free 3-pin SOT89 package.
1.2 Features and benefits
Internally biased
Flat gain
High linearity with an IP3O of 40 dBm and
an IP2O of 60 dBm
Noise figure of 2.1 dB
75 input and output impedance
Operating from 5 V to 8 V supply
1.3 Applications
General wideband amplifiers.
CATV return amplifier; frequency ranges of 5 MHz to 300 MHz.
CATV infrastructure network driver in optical nodes (FTTx), distribution amplifiers,
trunk amplifiers and line extenders in the frequency range from 40 MHz to 1006 MHz.
The product is ideally suited for applications as drop amplifiers in CATV distribution
systems such as FTTH
1.4 Quick reference data
Table 1. Quick reference data
Bandwidth 40 MHz to 1006 MHz; Tamb = 25 C; typical values at VCC = 8 V; ZS = ZL = 75 ; R1 = 470 ; R2 = 300 .
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
ICC(tot)
Tamb
NF
supply voltage
total supply current
ambient temperature
noise figure
RF input AC coupled
f = 500 MHz
7.6 8
8.4 V
- 120 135 mA
40 -
+85 C
- 2.1 2.6 dB
PL(1dB)
IP3O
IP2O
output power at 1 dB gain compression
output third-order intercept point
output second-order intercept point
23.5
[1] 36
[2] -
25
40
60
-
-
-
dBm
dBm
dBm
[1] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product (IM3) is 2 f2 f1, where
f2 = f1 6 MHz. Input power Pi = 20 dBm.
[2] The fundamental frequencies (f1) and (f2) lay between 40 MHz and 1006 MHz. The intermodulation product (IM2) is f2 f1, with
40 MHz < f1-f2< 1006 MHz. Input power Pi = 20 dBm.


BGA3018 데이터시트, 핀배열, 회로
NXP Semiconductors
BGA3018
1 GHz 18 dB gain wideband amplifier MMIC
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
RF_OUT and biasing
GND
RF_IN
Simplified outline
[1]
[2]
[1]
321
Graphic symbol
31
2
sym130
[1] This pin is DC-coupled and requires an external DC-blocking capacitor.
[2] The center metal base of the SOT89 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
Version
BGA3018
-
plastic surface-mounted package; exposed die pad SOT89
for good heat transfer; 3 leads
OM7860
EVB
1 GHz 18 dB gain wideband amplifier application
-
OM7864
EVB
5 MHz to 300 MHz 18 dB reverse amplifier application -
OM7868
EVB
40 MHz to 1006 MHz push-pull amplifier application -
OM7861
EVB
BGA301x wideband variable gain amplifier application -
4. Marking
Table 4. Marking codes
Type number
BGA3018
Marking code
*6Y
Description
* = W : made in China
5. Limiting values
BGA3018
Product data sheet
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCC
Pi
Tstg
Tj
Tamb
VESD
supply voltage
input power
storage temperature
junction temperature
ambient temperature
electrostatic discharge
voltage
RF input AC coupled
single tone
Human Body Model (HBM);
According JEDEC standard 22-A114E
Charged Device Model (CDM);
According JEDEC standard 22-C101B
Min Max Unit
0.6 +15 V
- 20 dBm
65 +150 C
- 150 C
40 +85 C
2-
kV
2-
kV
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 September 2013
© NXP B.V. 2013. All rights reserved.
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