|
|
PDF RF5722 Data sheet ( Hoja de datos )
| Número de pieza | RF5722 | |
| Descripción | LINEAR POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de RF5722 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
RF5722
3.0V TO 3.6V, 2.4GHz TO 2.5GHz
LINEAR POWER AMPLIFIER
Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.45mm
Features
Single Power Supply 3.0V to
3.6 V
24dB Minimum Gain
Input Matched to 50
2400MHz to 2500MHz Fre-
quency Range
+18dBm at <2.5% typ EVM,
120mA at 3.3VCC
Applications
IEEE802.11b/g/n WiFi Appli-
cations
2.5GHz ISM Band Applica-
tions
Commercial and Consumer
Systems
Portable Battery-Powered
Equipment
Spread-Spectrum and MMDS
Systems
8
RF IN 1
Input
Match
VREG 2
3
7
Interstage
Match
Bias Circuit
6 VC2
2Fo
Filter
Power
Detector
5 RF OUT
4
Functional Block Diagram
Product Description
The RF5722 is a linear, medium-power, high-efficiency, two-stage amplifier IC
designed specifically for battery-powered WiFi applications such as PC cards, mini
PCI, and compact flash applications. The device is manufactured on an advanced
InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-
spectrum transmitters. The device is provided in a 2.2mmx2.2mm, 8-pin, QFN with
a backside ground. The RF5722 is designed to maintain linearity over a wide range
of supply voltages and power outputs. The RF5722 also has built-in power detector
and incorporates the input, and interstage components internally which reduces
the component count used externally and makes it easier to incorporate on any
design.
DS110619
Ordering Information
RF5722
RF5722SR
RF5722TR7
RF5722PCK-410
Standard 25 piece bag
Standard 100 piece reel
Standard 2500 piece reel
Fully assembled evaluation board tuned for 2.4GHz to
2.5GHz and 5 loose sample pieces
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10
1 page  
RF5722
Application Schematic
C3
56 pF
VCC
J3
RF IN
VREG
50 strip
R1
0
50 strip
L1
22 nH
C1
0.1 F
8
1
Input
Match
2
3
C5
330 pF
7
Interstage
Match
Bias Circuit
6
2Fo
Filter
Power
Detector
5
4
C2
1 uF
L2
8.2 nH
L3
1.0 nH
C4
1.8 pF
50 strip
C6
DNP
50 strip
J4
RF OUT
PDETECT
DS110619
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet RF5722.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RF5722 | LINEAR POWER AMPLIFIER | RF Micro Devices |
| RF5725 | SINGLE-BAND FRONT END MODULE | RF Micro Devices |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |