RF5633 반도체 회로 부품 판매점
LINEAR POWER AMPLIFIER
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 RF Micro Devices |
RF5633Single
5.0V, 3.3 to
3.8GHz Linear
Power Ampli-
fier
RF5633
SINGLE 5.0V, 3.3 TO 3.8GHZ
LINEAR POWER AMPLIFIER
Package Style: QFN, 24-Pin, 4mmx4mmx0.9mm
Features
High Gain; 34dB
Supports Low Gain Mode
2.5% EVM WiMAX
+28dBm, 5.0V
Integrated Power Detector
Multiple Frequency Ranges
Applications
WiMAX Customer Premises
Equipment
WiMAX Access Points
IEEE 802.16 WiMAX Systems
Functional Block Diagram
Product Description
The RF5633 is a linear power amplifier IC designed specifically for WiMAX
final or driver stage applications. The device is manufactured on an
advanced InGaP Heterojunction Bipolar Transistor (HBT) process, and is
provided in a leadless chip carrier with a backside ground. The RF5633 is
designed to maintain linearity over a wide range of temperatures and
power outputs. The external match offers tunability for output power over
multiple bands. RF5633 features internal input and interstage match,
power down mode, and power detector.
Ordering Information
RF5633SQ
RF5633SR
RF5633TR13
RF5633LPCK-410
RF5633HPCK-410
Standard 25 piece bag
Standard 100 piece reel
Standard 2500 piece reel
3.4GHz to 3.6GHz WiMAX Evaluation PCBA with 5 loose pcs
3.6GHz to 3.8GHz WiMAX Evaluation PCBA with 5 loose pcs
DS120213
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 11
RF5633
Absolute Maximum Ratings
Parameter
Supply Voltage, RF Applied
Supply Voltage, no RF Applied
DC Supply Current
Input RF Power with 50 Load
Operating Ambient Temperature
Storage Temperature
Moisture Sensitivity
Rating
-0.5 to +5.25
-0.5 to +6.0V
2000
+15
-40 to +85
-40 to +150
MSL2
Unit
VDC
VDC
mA
dBm
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Specification
Min. Typ. Max.
IEEE802.16e, 5.0V
Compliance
Frequency
Output Power
EVM
3.4
26.5
28
2.5
3.6
3
Stability
Gain
Low Gain Mode - Gain reduction
Gain flatness, high gain mode and
low gain mode
Power Detect Voltage
Noise Figure
Current
Operating
Quiescent
IREG
Shutdown
Power Supply
VREG1, VREG2, VREG3 Input Voltage
Turn-on time from setting of VREG
Input Return Loss
Output Return Loss
Stable into Output VSWR
No damage into Output VSWR
0
32.5
0.2
4.85
34.5
24
5
1000
600
6
5
5
5
400
-15
-10
34
36.5
3
1.8
1300
800
10
30
5.25
5.15
1500
-10
-7
4:1
10:1
Unit
GHz
dBm
%
dBm
dB
dB
dB
V
dB
mA
mA
mA
uA
V
V
nsec
dB
dB
Condition
Nominal Condition T=25 °C, VCC=5.0V,
VREG 1, 2, and 3=5.0V, Frequency=3.4GHz to
3.6GHz, using a standard IEEE802.16e
16QAM waveform at 37% duty cycle unless oth-
erwise noted.
IEEE802.16e
With IEEE802.16e, 16 QAM standard waveform
at <2.5% EVM
802.16e increase in EVM over EVM floor; RF
POUT=+28dBm, Over temperature -40°C to
+85°C
PA should be stable when POUT is measured
from 0 to 34dBm
POUT = 28 dBm
Drop in gain versus high gain mode, by setting
VREG2 = 0 V
Peak-Peak over any 200MHz bandwidth.
POUT=10 to 30dBm.
RF POUT=+28dBm, Over Temperature -40°C to
+85°C
RF=OFF, VCC=+5V, VREG=5V, Over Tempera-
ture -40°C to +85°C
RF POUT=+28dBm VCC=+5V, VREG=5V, Over
Temperature -40°C to +85°C
RF=OFF, VCC=+5V, VREG=0V, Over Tempera-
ture -40°C to +85°C
Output stable to within 90% of final gain
No spurs above -47dBm
+5dBm PIN
2 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120213
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RF5633 amplifier
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