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PDF RF5322 Data sheet ( Hoja de datos )
| Número de pieza | RF5322 | |
| Descripción | LINEAR POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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Hay una vista previa y un enlace de descarga de RF5322 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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RF5322
3V TO 4.5V, 2.4GHz TO 2.5GHz
LINEAR POWER AMPLIFIER
Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.4mm
Features
Single Power Supply 3.0V to
3.6 V
24dB Minimum Gain
Input and Output Matched to
50
2400MHz to 2500MHz Fre-
quency Range
+18dBm @ <2.5% typ EVM,
120mA @ 3.3VCC
Applications
IEEE802.11b/g/n WiFi Appli-
cations
2.5GHz ISM Band Applica-
tions
Commercial and Consumer
Systems
Portable Battery-Powered
Equipment
Spread-Spectrum and MMDS
Systems
8
RF IN 1
Input
Match
7
Interstage
Match
Output
Match
6 VC2
VREG 2
Bias Circuit
Power
Detector
5 RF OUT
34
Functional Block Diagram
Product Description
The RF5322 is a linear, medium-power, high-efficiency, two-stage amplifier IC
designed specifically for battery-powered WiFi applications such as PC cards, mini
PCI, and compact flash applications. The device is manufactured on an advanced
InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-
spectrum transmitters. The device is provided in a 2.2mmx2.2mm, 8-pin, QFN with
a backside ground. The RF5322 is designed to maintain linearity over a wide range
of supply voltages and power outputs. The RF5322 also has built-in power detector
and incorporates the input, interstage, and output matching components internally
which reduces the component count used externally and makes it easier to incorpo-
rate on any design.
DS110618
Ordering Information
RF5322
RF5322SR
RF5322TR7
RF5322PCK-410
Standard 25 piece bag
Standard 100 piece reel
Standard 2500 piece reel
Fully assembled evaluation board tuned for 2.4 to 2.5 GHz
and 5 piece loose samples
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
RF MEMS
InGaP HBT
SiGe HBT
Si BJT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 12
1 page  
Pin Out
RF IN 1
8
7
6 VC2
RF5322
VREG 2
3
5 RF OUT
4
DS110618
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 12
5 Page 
RF5322
0.0
-10.0
-20.0
ACP versus POUT
ACP1 2400MHz
ACP1 2450MHz
ACP1 2500MHz
2400MHz ACP2
2450MHz ACP2
2500MHz ACP2
-30.0
-40.0
-50.0
-60.0
-70.0
-80.0
10.0 12.0 14.0 16.0 18.0 20.0 22.0
Output Power (dBm)
Gain verus POUT
30.0
29.0
28.0
27.0
26.0
25.0
24.0
23.0
22.0
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
2400MHz
2450MHz
2500MHz
5.0 10.0 15.0 20.0
Output Power (dBm)
25.0
PDETECT versus POUT
2400MHz
2450MHz
2500MHz
5.0 10.0 15.0
Output Power (dBm)
20.0
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
150.0
140.0
130.0
120.0
110.0
100.0
90.0
80.0
70.0
60.0
50.0
40.0
0.0
EVM versus POUT
2400MHz
2450MHz
2500MHz
5.0
10.0
15.0
Output Power (dBm)
20.0
Operating Current versus POUT
2400MHz
2450MHz
2500MHz
5.0 10.0 15.0
Output Power (dBm)
20.0
DS110618
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet RF5322.PDF ] | |
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