파트넘버.co.kr RFGA2054 데이터시트 PDF


RFGA2054 반도체 회로 부품 판매점

InGaP HBT MMIC Amplifier



RF Micro Devices 로고
RF Micro Devices
RFGA2054 데이터시트, 핀배열, 회로
RFGA2054
InGaP HBT
MMIC Ampli-
RFGA2054fier
InGaP HBT MMIC AMPLIFIER
50MHz TO 3000MHz
Package: SOT-89
Features
Low Cost
Broadband Gain
Internally Matched
Internal Active Bias
No Dropping Resistor
Single Supply 5V Operation
HBM ESD Level >1000V
Applications
PA Driver Amplifier
LO Buffer Amplifier
Cellular, PCS, GSM, UMTS, LTE,
TD-SCDMA
Wideband Instrumentation
Wireless Data, Satellite
Terminals
Functional Block Diagram
Product Description
The RFGA2054 is a high performance InGaP HBT MMIC amplifier. The RFGA2054's
internal active bias circuitry allows the amplifier to operate directly from a 5V supply
and provides stable current over temperature and process Beta variation. This Dar-
lington amplifier is internally matched to 50making it ideal for applications
requiring small footprints and minimal external components.
Ordering Information
RFGA2054SR
RFGA2054SQ
RFGA2054TR7
RFGA2054TR13
RFGA2054PCK-410
7” Sample reel with 100 pieces
Sample bag with 25 pieces
7” Reel with 750 pieces
13” Reel with 2500 pieces
500MHz to 3000MHz PCBA with 5-piece sample bag
DS111213
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RFGA2054 데이터시트, 핀배열, 회로
RFGA2054
Absolute Maximum Ratings
Parameter
Rating
Supply Voltage (VCC)
Device Current (ICC)
CW Input Power, 50Output VSWR
CW Input Power, 10:1 Output VSWR
6.0
130
15
10
Operating Junction Temperature (TJ)
Operating Temperature Range (TL)
Storage Temperature
150
-40 to +85
-55 to +150
ESD Rating - Human Body Model
1C (1000V)
Moisture Sensitivity Level
MSL-2
NOTES: 1. The maximum rating must all be met simultaneously.
2. PDISS = PDC + PRFIN - PRFOUT.
3. TJ = TL + PDISS * RTH.
Unit
V
mA
dBm
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
Specification
Min. Typ. Max.
Linear Operation
Input Power (PIN)
3.0
Gain
17.3
OIP3
28
P1dB
18.5
Input Return Loss
Output Return Loss
Isolation
Noise Figure
Operating Current (Quiescent)
Operating Voltage (VCC)
Thermal Resistance (RTH)
Saturated Operation
20.3
18.8
18.4
33.5
30.5
29.0
20.3
20.0
19.5
13
13.5
23
3.6
68
5.0
135
20.3
78
5.25
Input Power (PIN)
10
Saturated Output Power
Operating Current
Operating Voltage
20
20.5
20.7
5.0
90
5.25
Unit
dBm
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
mA
V
°C/W
dBm
dBm
dBm
dBm
mA
V
Condition
Typical performance at 25°C using the standard sample
EVB with R2 = open. This design is for linear operation
only.
Max recommended continuous input power,
VCC < 5.0V, Load VSWR < 2:1; R2 = open
850MHz
2140MHz
2650MHz
850MHz (0dBm/Tone, 1MHz spacing)
2140MHz (0dBm/Tone, 1MHz spacing)
2650MHz (0dBm/Tone, 1MHz spacing)
850MHz
2140MHz
2650MHz
2140MHz
At VCC = 5.0V
Max recommended voltage for continuous operation
At quiescent current, no RF, VCC = 5.0V
Typical performance at 25°C using the input pull-down
resistor (R2 = 5.1 K) to lower quiescent current. See
schematic following the "saturated operation plots".
Max. recommended continuous input power
VCC < 5.0V, Load VSWR < 2:1, R2 = 5.1 K
850MHz
2140MHz
2650MHz
Max recommended current for continuous operation
Max recommended voltage for continuous operation
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS111213




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RFGA2054 amplifier

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RFGA2054

InGaP HBT MMIC Amplifier - RF Micro Devices