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RF3855 반도체 회로 부품 판매점

3.1V LINEAR POWER AMPLIFIER



RF Micro Devices 로고
RF Micro Devices
RF3855 데이터시트, 핀배열, 회로
RF38553.1 V
Linear Power
Amplifier
RF3855
3.1V LINEAR POWER AMPLIFIER
Package Style: QFN, 16-Pin, 4 x 4
Features
Single 3.1V Supply
Applications
L-BAND SATCOM Applications
1 16 15 14 13
VPD1 2
12 VCC1
MODE 3
11 VCC1
VPD2 4
10 VCC
56789
Functional Block Diagram
Product Description
The RF3855 is a high-power, high-efficiency linear amplifier IC targeting L-
BAND SATCOM Applications. The device is manufactured on an advanced
Gallium Arsenide process, and has been designed for use as the final RF
amplifier applications in the 1611MHz to 1618MHz band. The package is
a 4mmx4mm, 16-pin QFN plastic package with backside ground.
Ordering Information
RF3855
3.1V Linear Power Amplifier
DS110914
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3855 데이터시트, 핀배열, 회로
RF3855
Absolute Maximum Ratings
Parameter
Supply Voltage
Mode Voltage (VMODE)
Control Voltage (VREG)
Input RF Power
Operating Case Temperature
Storage Temperature
Rating
+5.0
+4.2
+3.0
+10
-40 to +85
-30 to +150
Unit
VDC
VDC
VDC
dBm
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
High Power State
(VMODE Low)
Frequency Range
Linear Gain
OIP3
OP1dB
DC Supply
Supply Voltage
Quiescent Current
VREG Current
VMODE Current
Total Current (Power Down)
VREG “Low” Voltage
VREG “High” Voltage
VMODE “Low” Voltage
VMODE “High” Voltage
Specification
Min. Typ. Max.
1611
30
31
>22
3.0
150
0
2.75
0
2.0
31
34
3.1
185
5
2.85
1618
34
3.6
300
10
1
10
0.5
2.95
0.5
3.0
Unit
MHz
dB
dBm
dBm
V
mA
mA
mA
A
V
V
V
V
Condition
Case T=25°C, VCC=3.1V, VREG=2.90V,
VMODE=0V to 0.5V, Freq=1615MHz
Tone 1: 1614MHz @ +19dBm
Tone 2: 1615MHz @ +19dBm
VMODE=Low=High Gain Mode
VREG = Low
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS110914




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RF3855 amplifier

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