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BGA7M1N6 반도체 회로 부품 판매점

Silicon Germanium Low Noise Amplifier



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Infineon
BGA7M1N6 데이터시트, 핀배열, 회로
BGA7M1N6
Silicon Germanium Low Noise Amplifier for LTE
Data Sheet
Revision 3.1 (Min/Max), 2014-02-11
RF & Protection Devices


BGA7M1N6 데이터시트, 핀배열, 회로
Edition 2014-02-11
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.




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BGA7M1N6 amplifier

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