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PDF L6327 Data sheet ( Hoja de datos )
| Número de pieza | L6327 | |
| Descripción | 6 / 4 CHANNEL VOLTAGE SENSE GMR PREAMPLIFIER | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de L6327 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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L6327
L6332
6 / 4 CHANNEL VOLTAGE SENSE GMR PREAMPLIFIER
PRODUCT PREVIEW
s Power Supplies +5Vdc, -5Vdc
s Current bias or voltage bias (selectable) /
Differential Voltage Sense architecture
s 6 or 4 channel versions
s 38-pin TSSOP package (for either 6 or 4
channels)
s Internal reference Resistor for read and write
currents
s Read channel -3dB bandwidth > 400MHz
(Rmr=50 ohm no interconnect)
s Input equivalent preamplifier voltage noise
0.5nV/rtHz nominal
s Input equivalent MR bias current noise 10 pA/
rtHz nominal
s MR bias current programmable (5 bit DAC) 1.5-
7.0mA nominal MR bias voltage programmable
(5 bit DAC) 65-335mV nominal
s Programmable gain (100V/V, 150, 200 and
250V/V) and read bandwidth
s Write frequency up to 300 MHz (Lh=70nH,
Rh=20 ohms, Ch=2pF, VEE=-5V)
s Rise/Fall time 0.6ns ( Iw =40mA 0-pk, Lh=70nH,
Rh=20 ohms, Ch=2pF, VEE=-5V)
s Write current programmable (5 bit DAC) 15-60mA
s PECL write data input
s Bi-directional 16-bit TTL Serial interface for
head selection, read/write currents selection,
chip parameters modification, chip enable,
vendor code and fault status read back registers
s 2-pin mode selection (R/W, MRR)
s Bank write feature for servo write
s Digital buffered head voltage DBHV / Analog
buffered head voltage ABHV pin (gain 5)
s Thermal asperity detection & correction with
adjustable sensitivity level (6 bit DAC)
s Automatic successive approximation digital
measurement of temperature and Rmr (7 bits)
s Read and write head open/short detection, low
low supply detect and temperature monitoring
(high temperature warning and Analog
Temperature Diode Voltage measurement)
s Low write frequency detection.
s WRITE to READ fast recovery 150ns (same
TSSOP38
ORDERING NUMBERS: L6327
L6332
head, including 100ns blanking period)
s Head-to-head switch in READ mode - 10µs (nom)
s Head and MR bias current switching transient
current head protection
s READ-to-WRITE switching 50ns (same head)
s Programmable read bias during write and bank
write operation
s ESD diode for GMR head protection
DESCRIPTION
L6327/L6332 is a BICMOS monolithic integrated cir-
cuit GMR differential preamplifier designed for use
with four-terminal magneto-resistive GMR read/in-
ductive write heads. It is available as either a six
(L6327) or four (L6332) channel device. The devices
consist of a voltage-sense, current-bias or voltage-
bias (selectable), differential input and differential
output, low-noise, high bandwidth read amplifier and
include fast current switching write drivers which sup-
port data rates in excess of 550 Mb/s with 70nH write
heads.
The GMR preamplifier provides programmable read
current / voltage bias and write current (5 bit DAC for
the read bias, 5 bit DAC for the write current), fault
detection circuitry and servo writing features. Read
amplifier gain, write current wave shape (overshoot,
undershoot and damping) can be adjusted and a
thermal asperity detection and correction circuit can
be enabled and programmed with different thresh-
olds (6 bit DAC) through a 16-bit bi-directional serial
interface (SDEN, SDATA, SCLK). The device oper-
ates from a +5V supply and a -5V supply (nominal).
No external components are required as a trimmed
or untrimmed resistor for reference current setting is
employed.
February 2001
This is preliminary information on a new product now in development. Details are subject to change without notice.
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet L6327.PDF ] | |
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