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PDF RF3189 Data sheet ( Hoja de datos )
| Número de pieza | RF3189 | |
| Descripción | QUAD-BAND GSM/EDGE/GSM850/EGSM900/DCS/PCS/POWER AMPLIFIER MODULE | |
| Fabricantes | RFMD | |
| Logotipo |  |
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RF3189
QUAD-BAND GSM/EDGE/GSM850/EGSM900
/DCS/PCS/POWER AMPLIFIER MODULE
Package Style: Module (5.00mmx5.00mmx1.00mm)
DCS RFIN 1
10 DCS RFOUT
Features
Linear EDGE and GSM Operation
High Gain for use in Systems with
Low RF Driver Power
Typical GMSK Efficiency
GSM850/900 48/53%
DCS/PCS 50/53%
Auto VBATT Tracking Circuit avoids
Switching Transients at Low
Supply Voltage
Low Power Mode for Reduced
EDGE Current
Digital Bias Control: Simple
Implementation of Low Power
Mode
Integrated Power Flattening
Circuit Reduces Power and
Current into Mismatch
Integrated VRAMP Rejection Filter
Eliminates External Components
Applications
Quad-Band GSM/EDGE Hand-
sets
GSM/EDGE Transmitter Line-ups
Portable Battery-Powered
Equipment
GSM850/EGSM900/DCS/
PCS Products
GPRS Class 12 Compatible
Products
Mobile EDGE/GPRS Data
Products
BAND SEL 2
TX EN 3
VBATT 4
VMODE 5
VRAMP / VBIAS 6
GSM RFIN 7
GND 8
Integrated Power
Control
9 GSM RFOUT
Functional Block Diagram
Product Description
The RF3189 is a high power, high linearity performance in EDGE mode, dual-mode amplifier
module with integrated power control. The input and output terminals are internally matched to
50. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction
Bipolar Transistor (GaAs HBT) process, which is designed to operate either in saturated mode
for GMSK signaling or linear mode for 8PSK signaling. The module is designed to be the final
amplification stage in a dual-mode GSM/EDGE mobile transmit lineup operating in the 824MHz
to 915MHz (low) and 1710MHz to 1910MHz (high) bands (such as a cellular handset). Band
selection is controlled by an input on the module which selects either the low or high band. The
device is packaged on a 5mmx5mm laminate module with a protective plastic over-mold. The
RF3189 features RFMD’s latest integrated power flattening circuit, which significantly reduces
current and power variation into load mismatch. The RF3189 provides excellent ESD protection
at all the pins. The RF3189 also provides integrated VRAMP rejection filter which improves noise
performance and transient spectrum.
Ordering Information
RF3189 Quad-Band GSM/EDGE/GSM850/EGSM900RF3189Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS/Power Amplifier Module
/DCS/PCS/Power Amplifier Module
Power Amplifier Module, 5 Piece Sample Pack
RF3189PCBA-41X Fully Assembled Evaluation Board
DS100412
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
GaAs pHEMT
Si CMOS
GaN HEMT
RF MEMS
InGaP HBT
SiGe HBT
Si BJT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 28
1 page  
RF3189
Parameter
Specification
Min. Typ. Max.
EGSM 900MHz Band
GMSK Mode
Operating Frequency Range
Input Power Range, PIN
Maximum Output Power 1
Maximum Output Power 2
Total Efficiency (PAE)
Output Noise Power
880
-2
34.5
32.5
47
+1
35
33
53
-80
915
+4
-79
-83 -82
Forward Isolation 1
-32
Forward Isolation 2
2f0 Harmonics
3f0 Harmonics
Fundamental Cross Band Coupling
-10
-15 -10
-25 -15
-1 3
2f0, 3f0 Cross Band Coupling
All Other Non-harmonic Spurious
Input VSWR
Output Load VSWR Stability
-22 -17
-36
2:1 3:1
-36
Output Load VSWR Ruggedness
No damage or permanent degradation to
device
Note: VRAMP,MAX=2.2V, VRAMP,MIN=0.25V, Rated POUT=34.5dBm
Unit
MHz
dBm
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Condition
Nominal test conditions unless otherwise
stated. Temp=25 °C, VBATT=3.6V,
VMODE=”Low”, Freq=880MHz to 915MHz,
25% Duty Cycle, Pulse Width=1154s, PIN=-
2dBm, BAND_SEL=“Low”, TX_EN=“High”,
VRAMP/VBIAS= VRAMP,MAX
Temp=25°C, VBATT=3.6V
Temp=+85°C, VBATT=3.2V
Pin = +1 dBm
925MHz to 935MHz, f0=915MHz,
POUT<Rated POUT, RBW=100kHz
935MHz to 960MHz, f0=915MHz,
POUT<Rated POUT, RBW=100kHz
TX_EN=0V, VRAMP=VRAMP,MIN,
PIN = +4 dBm
VRAMP=VRAMP,MIN, PIN=+4dBm
POUT<Rated POUT
POUT<Rated POUT
Measured at DCS_RFOUT pin,
POUT<Rated POUT at GSM_RFOUT pin
Measured at DCS_RFOUT pin,
POUT<Rated POUT at GSM_RFOUT pin
Over PIN range, POUT<Rated POUT
Load VSWR=5:1 All phase angles. Set VRAMP
where POUT<Rated POUT into 50 load, then
load switched to 5:1 VSWR. Full PIN Range,
RBW=3MHz, no oscillations
Load VSWR=10:1 All phase angles, Set VRAMP
where POUT<Rated POUT into 50 load, then
load switched to VSWR=10:1
DS100412
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 28
5 Page 
RF3189
Pin Function Description
1 DCS_RFIN RF input to the high-band PA. It is DC-blocked within the part.
2 BAND_SEL Digital input enables either the low band or high band amplifier die within the module. A logic low selects Low
Band (GSM850/EGSM900), a logic high selects High Band (DCS1800/PCS1900). This pin is a high imped-
ance CMOS input with no pull-up or pull-down resistors.
3
TX_EN
Digital input enables or disables the internal circuitry. When disabled, the module is in the OFF state, and
draws virtually zero current. This pin is a high impedance CMOS input with no pull-up or pull-down resistors.
4
VBATT
Main DC power supply for all circuitry in the RF3189. Traces to this pin will have high current pulses during
operation so proper decoupling and routing should be observed.
5
VMODE
Digital input which internally adjusts settings to optimize amplifier performance for saturated or linear mode. A
logic low selects saturated mode for GMSK modulation. A logic high selects linear mode for 8PSK modulation.
This pin is a high impedance CMOS input with no pull-up or pull-down resistors.
6 VRAMP/VBIAS In GMSK mode (where VMODE=“Low”), the voltage on this pin controls the output power by varying the regu-
lated collector voltage of the amplifiers. A logic high with VMODE=“High” selects High Power EDGE Mode and a
logic low with VMODE=“High” selects low power EDGE Mode. This pin also acts as bias selection logic pin in
EDGE mode. A logic high allows linear performance up to the highest supported output power. A logic low
selects a low bias (current saving mode) which will only meet linearity performance at low power levels. An
internal 300kHz filter reduces switching ORFS resulting from transitions between DAC steps. Most systems will
have no need for external VRAMP filtering. This pin provides an impedance of approximately 60k.
7 GSM_RFIN RF input to the low-band PA. It is DC-blocked within the part.
8
GND
Ground.
9 GSM_RFOUT RF output from the low-band PA. It is DC-blocked within the part.
10 DCS_RFOUT RF output from the high-band PA. It is DC-blocked within the part.
11
GND
Main ground pad in center of part. This pad should be tied to the main ground plane with as little loss as pos-
sible for optimum linearity.
DS100412
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 28
11 Page | ||
| Páginas | Total 28 Páginas | |
| PDF Descargar | [ Datasheet RF3189.PDF ] | |
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