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AVAGO |
ALM-80210
0.25W Analog Variable Gain Amplifier
Data Sheet
Description
Avago Technologies ALM-80210 is a 0.25W Analog Con-
trolledVariable Gain Amplifier which operates from 1.6GHz
to 2.7GHz. The device provides an exceptionally high OIP3
level of 39.5dBm, which is maintained over a wide attenu-
ation range. The device features wide gain control range,
low current, excellent input and output return loss.
The ALM-80210 is housed in a miniature 5.0X5.0X1.1
mm3, 10-lead multiple-chips-on-board (MCOB) module
package. This part is suitable for the AGC/Temperature
compensation circuits application in wireless infrastruc-
ture such as Cellular/PCS/W-CDMA/WLLand and new gen-
eration wireless technologies systems.
Pin connections and Package Marking
Features
x Halogen free
x Wide Gain Control Range
x High OIP3 across attenuation range
Specifications
At 1.9GHz, Vdd = 5V, Itotal = 112mA (typ), Vbias = 4V, Vctrl = 5V @
25°C
x OIP3 = 40.5dBm
x Noise Figure = 5.2dB
x Gain = 9.8dB
x P1dB = 23.2dBm
x IRL = 13.6dB, ORL = 12.1dB
x Dynamic Range = 35dB
80210
WWYY
XXXX
Application
x CDMA, W-CDMA, WiMAX, LTE and other applications in
the 1.6GHz to 2.7GHz range.
x Transmitter and Receiver Gain Control
x Temperature Compensation Circuitry
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 90 V
ESD Human Body Model = 650 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
6 RFout
RFin 1
Note :
Top View : Package marking provides orienation and identification
“80210” = Device Code
“WWYY“ = Workweek and Year Code
“XXXX” = Assembly Lot number
Figure 1. Simplified Schematic diagram
ALM-80210 Absolute Maximum Rating (1)
TC = 25°C
Symbol
Id,max
Vd.,max
Vctrl_max
Vbias_max
Pd
Pin
Tj
Parameter
Drain Current
Drain Voltage,
RF output to ground
Control Voltage
Biasing Voltage
Power Dissipation
CW RF Input Power (4)
Junction Temperature
Units
mA
V
V
V
mW
dBm
°C
Absolute Maximum
140
5.5
7
15
770
25
150
Thermal Resistance (2,3)
(Vd = 5.0V) Tjc = 70°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage
2. Derate 14.3mW/°C for TL > 97°C
3. Thermal resistance measured using 150°C
Infra-Red Microscopy Technique.
4. Max rating for Pin is under maximum
attenuation condition i.e. Vctrl = 1V.
ALM-80210 Electrical Specification (1)
TC = 25°C, Zo = 50:, Vdd = 5.0V, Vbias = 4V, Vctrl = 5V unless noted
Symbol Parameter and Test Condition
Frequency Units Min. Typ. Max. stdev(4)
Idd Operating Amplifier Current Range
NF Noise Figure at minimal Attenuation
N/A
1.9GHz
2.1GHz
2.5GHz
mA 89
dB
112 134 0.002
5.2 5.9 0.088
5.4
5.7
Gain Gain at minimal Attenuation
OIP3(2) Output Third Order Intercept Point
1.9GHz
2.1GHz
2.5GHz
1.9GHz
2.1GHz
2.5GHz
8.2
dB
36
dBm
9.8 11.2 0.148
9.7
9.5
40.5 0.616
39.5
39.8
P1dB
Output Power at 1dB Gain Compression
1.9GHz
2.1GHz
2.5GHz
22
dBm
23.5
23..5
23.3
0.112
IRL Input Return Loss
1.9GHz
2.1GHz
2.5GHz
dB
13.6
14.9 NA
18.5
ORL Output Return Loss
1.9GHz
2.1GHz
2.5GHz
dB
12.1
14.3 NA
14.8
ISO Isolation
1.9GHz
2.1GHz
2.5GHz
dB
28.6
27.7 NA
26.7
Vbias
Attenuator Bias Voltage
N/A V 2.7 4 5 N/A
Vctrl Gain Variation Control Voltage
N/A V 1 – 5 NA
' Gain
Gain Variation Range (from Vctrl=1V to 5V)
1.9GHz
2.1GHz
2.5GHz
dB
35.0
35.1 NA
34.3
Note :
1. Measurements obtained from a test circuit described in Figure 53.
2. OIP3 test condition: F1 – F2 = 10MHz, with input power of -10dBm per tone measured at worst case side band.
3. Standard deviation data are based on at least 1000 pieces samples size taken from 2 wafer lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower specification limits.
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