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Hewlett-Packard |
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0885
Features
• Usable Gain to 6.0␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
22.5 dB Typical at 1.0␣ GHz
• Low Noise Figure:
3.3␣ dB Typical at 1.0␣ GHz
• Low Cost Plastic Package
Description
The MSA-0885 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
designed for use as a general
purpose 50 Ω gain block above
0.5␣ GHz and can be used as a high
gain transistor below this fre-
quency. Typical applications
include narrow and moderate band
IF and RF amplifiers in commer-
cial and industrial applications.
85 Plastic Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent perfor-
mance, uniformity and reliability.
The use of an external bias resistor
for temperature and current
stability also allows bias flexibility.
Typical Biasing Configuration
R bias
VCC > 10 V
C block
IN
4
1 MSA
2
3
RFC (Optional)
C block
Vd = 7.8 V
OUT
5965-9545E
6-422
MSA-0885 Absolute Maximum Ratings
Parameter
Device Current
Absolute Maximum[1]
65 mA
Power Dissipation[2,3]
500 mW
RF Input Power
+13 dBm
Junction Temperature
Storage Temperature
150°C
–65°C to 150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 7.7 mW/°C for TC > 85°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Thermal Resistance[2,4]:
θjc = 130°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 36 mA, ZO = 50 Ω
GP Power Gain (|S21| 2)
f = 0.1 GHz
f = 1.0 GHz
VSWR
Input VSWR
Output VSWR
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
NF 50 Ω Noise Figure
f = 1.0 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
21.0
dB
dBm
dBm
psec
V
mV/°C
6.2
Typ. Max.
32.5
22.5
1.9:1
1.6:1
3.3
12.5
27.0
125
7.8
–17.0
9.4
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
6-423
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