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PDF RFHA1000 Data sheet ( Hoja de datos )

Número de pieza RFHA1000
Descripción 15W GaN WIDE-BAND POWER AMPLIFIER
Fabricantes RF Micro Devices　
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RFHA1000
50MHz to
1000 MHz,
15 W GaN
Wideband
Power Ampli-
fier
RFHA1000
50MHz TO 1000MHz, 15W GaN WIDEBAND
POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
Features
Advanced GaN HEMT Technology
Output Power of 15W
Advanced Heat-Sink Technology
50MHz to 1000MHz
Instantaneous Bandwidth
Input Internally Matched to 50
28V Operation Typical
Performance
Output Power 41.5dBm
Gain 17dB
Power Added Efficiency 60%
-40°C to 85°C Operating
Temperature
Large Signal Models Available
EAR99 Export Control
Applications
Class AB Operation for Public
Mobile Radio
Power Amplifier Stage for
Commercial Wireless
Infrastructure
General Purpose Tx Amplification
Test Instrumentation
Civilian and Military Radar
VGS
Pin 1
RF IN
Pin 2,3
RF OUT / VDS
Pin 6,7
GND
BASE
Functional Block Diagram
Product Description
The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applica-
tions such as wireless infrastructure, RADAR, two way radios and general purpose
amplification. Using an advanced high power density Gallium Nitride (GaN) semi-
conductor process, these high-performance amplifiers achieve high efficiency, flat
gain, and large instantaneous bandwidth in a single amplifier design. The
RFHA1000 is an input matched GaN transistor packaged in an air cavity ceramic
package which provides excellent thermal stability through the use of advanced
heat sink and power dissipation technologies. Ease of integration is accomplished
through the incorporation of optimized input matching network within the package
that provides wideband gain and power performance in a single amplifier. An exter-
nal output match offers the flexibility of further optimizing power and efficiency for
any sub-band within the overall bandwidth.
Ordering Information
RFHA1000
RFHA1000PCBA-410
GaN Wideband Power Amplifier
Fully assembled evaluation board 50MHz to 1000MHz;
28V operation
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
BiFET HBT
InGaP HBT
SiGe HBT
Si BJT
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Prelim DS110922
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RFHA1000
Typical Performance in standard fixed tuned test fixture matched for 50MHz to
1000MHz (T=25°C, unless noted)
Gain versus Frequency
(CW, VD = 28V, IDQ = 88mA)
20
16
Power Added Efficiency versus Frequency
(CW, VD = 28V, IDQ = 88mA)
100
POoUuTt =41dBm
POoUuTt =40dBm
80 PPOoUuTt =30dBm
12 60
8 40
4
PPOoUuTt =41dBm
20
PPOoUuTt =40dBm
PPOoUuTt =30dBm
00
Frequency (MHz)
Frequency (MHz)
Input Return Loss versus Frequency
(CW, VD = 28V, IDQ = 88mA)
0
PPOoUuTt =41dBm
Ͳ5 PPOoUuTt =40dBm
PPOoUuTt =30dBm
Ͳ10
Ͳ15
Ͳ20
Ͳ25
Frequency (MHz)
19
18
17
16
15
14
13
20
Gain versus Output Power
(CW, VD = 28V, IDQ = 88mA)
freq=100MHz
freq=500MHz
freq=900MHz
25 30 35 40
POUT, Output Power (dBm)
45
100
80
60
40
20
0
20
Power Added Efficiency versus Output Power
(CW, VD = 28V, IDQ = 88mA)
freq=100MHz
freq=500MHz
freq=900MHz
25 30 35 40
POUT, Output Power (dBm)
45
0
Ͳ5
Ͳ10
Ͳ15
Ͳ20
Ͳ25
20
Input Return Loss versus Output Power
(CW, VD = 28V, IDQ = 88mA)
freq=100MHz
freq=500MHz
freq=900MHz
25 30 35 40
POUT, Output Power (dBm)
45
Prelim DS110922
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 11
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RFHA1000 arduino
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RFHA1000
Device Handling/Environmental Conditions
RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity,
high temperature environment.
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation
boards.
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is
saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than
the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maxi-
mum limits. RFMD recommends applying VGS=-5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be
adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current
(IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, con-
sidering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device
based on performance tradeoffs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is
measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the
package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink
but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the
measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the max-
imum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambi-
ent to the back of the package including heat sinking systems and air flow mechanisms. Incorporating the dissipated DC
power, it is possible to calculate the junction temperature of the device
Prelim DS110922
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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