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PDF J212 Data sheet ( Hoja de datos )
| Número de pieza | J212 | |
| Descripción | Amplifier | |
| Fabricantes | Micross | |
| Logotipo |  |
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J212
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J212
The J212 is a n-channel JFET General Purpose
amplifier with low noise and low leakage.
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J212
The TO-92 package is well suited for cost sensitive
applications and mass production.
HIGH GAIN
HIGH INPUT IMPEDANCE
LOW INPUT CAPACITANCE
gfs = 7000µmho MIN
IGSS = 100pA max
Ciss = 5pF
(See Packaging Information).
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
J212 Benefits:
High gain
Low Leakage
Low Noise
J212 Applications:
General Purpose Amplifiers
UHV / VHF Amplifiers
Mixers
Oscillators
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Derating over temperature
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage or Gate to Source Voltage
‐55°C to +150°C
‐55°C to +135°C
360mW
3.27 mW/°C
10mA
‐25V
J212 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP. MAX UNITS
CONDITIONS
BVGSS
Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V
VDS = 0V, IG = ‐1µA
VGS(off)
Gate to Source Cutoff Voltage
‐4 ‐‐ ‐6
VDS = 15V, ID = 1nA
IDSS Drain to Source Saturation Current (Note 2) 15
IGSS
Gate Reverse Current (Note 3)
‐‐
‐‐ 40 mA
‐‐
‐100
pA
VDS = 15V, VGS = 0V
VDS = 0V, VGS = ‐15V
IG
Gate Operating Current (Note 3)
‐‐ ‐10 ‐‐ pA
VDS = 10V, ID = 1mA
rDS(on)
Drain to Source On Resistance
‐‐ ‐‐ 50 Ω
IG = 1mA, VDS = 0V
J212 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
gfs
Forward Transconductance
7000
‐‐
Click Togos
Output Conductance
‐‐ ‐‐
MAX
12000
200
Buy
UNITS
µmho
CONDITIONS
VDS = 15V, VGS = 0V , f = 1kHz
Ciss
Input Capacitance
‐‐ 4 ‐‐ pF
VDS = 15V, VGS = 0V , f = 1MHz
Crss
Reverse Transfer Capacitance
‐‐ 1 ‐‐
en
Equivalent Noise Voltage
‐‐
10
‐‐ nV/√Hz
VDS = 15V, VGS = 0V , f = 1kHz
J212 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
td(on)
tr
td(off)
Turn On Time
Turn On Rise Time
Turn Off Time
2
2
ns
6
tf
Turn Off Fall Time
15
Note 1 ‐ Absolute maximum ratings are limiting values above which J212 serviceability may be impaired.
Note 2 ‐ Pulse test duration = 2ms
Note 3 – Approximately dou bles for ev ery 10°C increase in TA
Micross Components Europe
Available Packages:
VDD = 10V
VGS(H) = 0V
See Switching Circuit
TO-92 (Bottom View)
J212 in TO-92
J212 in bare die.
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx
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| PDF Descargar | [ Datasheet J212.PDF ] | |
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