파트넘버.co.kr BGA2800 데이터시트 PDF


BGA2800 반도체 회로 부품 판매점

MMIC Wideband Amplifier



NXP Semiconductors 로고
NXP Semiconductors
BGA2800 데이터시트, 핀배열, 회로
BGA2800
MMIC wideband amplifier
Rev. 1 — 3 August 2010
Product data sheet
1. Product profile
1.1 General description
Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
„ Internally matched to 50 Ω
„ A gain of 20 dB at 250 MHz increasing to 20.6 dB at 2150 MHz
„ Output power at 1 dB gain compression = 1 dBm
„ Supply current = 10.5 mA at a supply voltage of 3.3 V
„ Reverse isolation > 30 dB up to 2 GHz
„ Good linearity with low second order and third order products
„ Noise figure = 4 dB at 950 MHz
„ Unconditionally stable (K > 1)
1.3 Applications
„ LNB IF amplifiers
„ General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
Table 1.
Pin
1
2, 5
3
4
6
Pinning
Description
VCC
GND2
RF_OUT
GND1
RF_IN
Simplified outline Graphic symbol
654
1
63
123
4 2, 5
sym052


BGA2800 데이터시트, 핀배열, 회로
NXP Semiconductors
BGA2800
MMIC wideband amplifier
3. Ordering information
Table 2. Ordering information
Type number Package
Name
Description
BGA2800
-
plastic surface-mounted package; 6 leads
Version
SOT363
4. Marking
Table 3. Marking
Type number
BGA2800
Marking code
*E7
Description
* = - : made in Hong Kong
* = p : made in Hong Kong
* = W : made in China
* = t : made in Malaysia
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCC
ICC
Ptot
Tstg
Tj
Pdrive
supply voltage
supply current
total power dissipation
storage temperature
junction temperature
drive power
RF input AC coupled
Tsp = 90 °C
6. Thermal characteristics
Min Max Unit
3.0 3.6 V
- 55 mA
- 200 mW
40 +125 °C
- 125 °C
- 16.5 dBm
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to Ptot = 200 mW; Tsp = 90 °C
solder point
Typ Unit
300 K/W
7. Characteristics
Table 6. Characteristics
VCC = 3.3 V; ZS = ZL = 50 Ω; Pi = 40 dBm; Tamb = 25 °C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max
VCC supply voltage
ICC supply current
3.0 3.3 3.6
8.8 10.5 12.1
Unit
V
mA
BGA2800
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 August 2010
© NXP B.V. 2010. All rights reserved.
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