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PDF BGA7127 Data sheet ( Hoja de datos )

Número de pieza BGA7127
Descripción 400 MHz To 2700 MHz 0.5 W High Linearity Silicon Amplifier
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
Rev. 01 — 26 July 2010
Product data sheet
1. Product profile
1.1 General description
The MMIC is a one-stage amplifier, offered in a low-cost leadless surface-mount
package. It delivers 28 dBm output power at 1 dB gain compression and a superior
performance up to 2700 MHz. Its power saving features include simple quiescent current
adjustment, which allows class-AB operation and logic-level shutdown control to reduce
the supply current to 4 μA.
1.2 Features and benefits
„ 400 MHz to 2700 MHz frequency operating range
„ 12 dB small signal gain at 2 GHz
„ 28 dBm output power at 1 dB gain compression
„ Integrated active biasing
„ External matching allows broad application optimization of the electrical performance
„ 5 V single supply operation
„ All pins ESD protected
1.3 Applications
„ Broadband CPE/MoCA
„ WLAN/ISM/RFID
„ Wireless infrastructure (base station,
repeater, backhaul systems)
„ Industrial applications
„ E-metering
„ Satellite Master Antenna TV (SMATV)
1.4 Quick reference data
Table 1. Quick reference data
Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values
at VCC = 5 V; ICC = 180 mA; Tcase = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
f frequency
[1] 400 -
2700 MHz
Gp
PL(1dB)
IP3O
power gain
output power at 1 dB gain compression
output third-order intercept point
f = 2140 MHz
f = 2140 MHz
f = 2140 MHz
10.5 12 13.5
26.5 28.0 -
[2] 38 42 -
dB
dBm
dBm
[1] Operation outside this range is possible but not guaranteed.
[2] PL = 17 dBm per tone; spacing = 1 MHz.

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BGA7127 pdf
NXP Semiconductors
www.DataSheet4U.com
BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
7. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
Tcase = 85 °C; VCC = 5 V;
ICC = 180 mA
[1] Defined as thermal resistance from junction to GND pad.
Typ Max Unit
[1] 28 -
K/W
8. Static characteristics
Table 7. Characteristics
Input and output impedances matched to 50 Ω, SHDN = HIGH (shutdown disabled). Typical values
at VCC = 5.0 V; Tcase = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICC supply current
R1 = 1 Ω; R2 = 909 Ω, E96
[1] 100 -
250 mA
[2] 160 180 200 mA
R1 = 1.8 Ω; R2 = 909 Ω, E96
[2] 160 180 200 mA
during shutdown; pin SHDN = LOW
(shutdown enabled)
- 4 6 μA
[1] The supply current is adjustable. See Section 8.1 “Supply current adjustment” and Section 12 “Application
information”.
[2] See Section 12 “Application information”.
8.1 Supply current adjustment
The supply current can be adjusted by changing the value of external ICQ resistor (R2).
250
ICC
(mA)
200
001aal537
150
100
700
900 1100 1300 1500 1700
R2 (Ω)
Fig 4. Supply current as a function of the value of R2 at a supply voltage of 5 V.
BGA7127
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
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BGA7127 arduino
NXP Semiconductors
www.DataSheet4U.com
BGA7127
400 MHz to 2700 MHz 0.5 W high linearity silicon amplifier
12.1.2 1930 MHz to 1990 MHz at 5 V; 180 mA
VCC
R1
C7
C6
C5
50 Ω MSL1 C1 MSL2
RF_IN
VCC(BIAS)
VCC(RF)
C2 BGA7127
ICQ_ADJ
SHDN
R2
MSL3
L1
MSL4
MSL5 C4 MSL6 50 Ω
C3
enable
See Table 13 for a list of components.
PCB board specification:
Rogers RO4003C; height = 0.508 mm; εr = 3.38; copper thickness = 35 μm.
Fig 11. 5 V application schematic; 1930 MHz to 1990 MHz
001aam177
32
PL(1dB)
(dBm)
30
28
26
001aam117
(1)
(2)
(3)
18
Gp
(dB)
16
14
12
001aam118
(1)
(2)
(3)
24 10
22
1.93 1.95 1.97 1.99
f (GHz)
(1) Tcase = 25 °C.
(2) Tcase = 85 °C.
(3) Tcase = 40 °C.
Fig 12. Output power at 1 dB gain compression as a
function of frequency
8
1.93
1.95
1.97
1.99
f (GHz)
(1) Tcase = 25 °C.
(2) Tcase = 85 °C.
(3) Tcase = 40 °C.
Fig 13. Power gain as a function of frequency
BGA7127
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
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