MWE6IC9080NBR1 반도체 회로 부품 판매점
RF LDMOS Wideband Integrated Power Amplifiers
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 Freescale Semiconductor |
Freescale Semiconductor
Technical Data
Document Number: MWE6IC9080N
www.DRaetavS.he0e,t44U/.2co0m10
RF LDMOS Wideband Integrated
Power Amplifiers
The MWE6IC9080N wideband integrated circuit is designed with on--chip
matching that makes it usable from 865 to 960 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
•
Typical GSM
630 mA, Pout
P=e8r0foWrmaattnsceC:WVDD
=
28
Volts,
IDQ1
=
230
mA,
IDQ2
=
Frequency
Gps
(dB)
PAE
(%)
MWE6IC9080NR1
MWE6IC9080GNR1
MWE6IC9080NBR1
865--960 MHz, 80 W CW, 28 V
GSM, GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
920 MHz
29.0 49.7
940 MHz
28.8 51.6
960 MHz
28.5 52.3
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
• Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 Watts CW
Pout
• Typical Pout @ 1 dB Compression Point ≃ 90 Watts CW
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 =
630 mA, Pout = 35 Watts Avg.
Frequency
Gps
(dB)
PAE
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
CASE 1618--02
TO--270 WB--14
PLASTIC
MWE6IC9080NR1
CASE 1621--02
TO--270 WB--14 GULL
PLASTIC
MWE6IC9080GNR1
920 MHz 30.0 37.0
940 MHz 30.0 37.8
960 MHz 29.5 38.0
Features
--62
--62
--62
--75 0.8
--75 1.2
--75 1.5
CASE 1617--02
TO--272 WB--14
PLASTIC
MWE6IC9080NBR1
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
• On--Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
VGS2
VGS1
RFin
VGS1
VGS2
VDS1
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
NC
VDS1
VVGGSS12
NC
RFin
RFin
NC
VGS1
VGS2
VDS1
NC
1
2
3
4
5
6
7
8
9
10
11
12
14 RFout /VDS2
13 RFout /VDS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
1
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
Tstg
TC
TJ
Pin
Symbol
RθJC
www.DataSheet4U.com
Value
Unit
--0.5, +66
Vdc
--0.5, +6
Vdc
--65 to +150
°C
150 °C
225 °C
20.5 dBm
Value (2,3)
Unit
°C/W
GSM Application
(Case Temperature 80°C,
Pout = 80 W CW, 940 MHz)
Stage 1, 28 Vdc, IDQ1 = 230 mA
Stage 2, 28 Vdc, IDQ2 = 630 mA
3.5
0.52
GSM EDGE Application
(Case Temperature 80°C,
Pout = 40 W CW, 940 MHz)
Table 3. ESD Protection Characteristics
Stage 1, 28 Vdc, IDQ1 = 230 mA
Stage 2, 28 Vdc, IDQ2 = 630 mA
3.6
0.54
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3 260 °C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1 μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1 μAdc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 33 μAdc)
VGS(th)
1.5
2
3.5 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 230 mAdc)
VGS(Q)
—
2.7
— Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 230 mAdc, Measured in Functional Test)
VGG(Q)
15
17
19 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
2
RF Device Data
Freescale Semiconductor
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