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MW7IC930NBR1 반도체 회로 부품 판매점

RF LDMOS Wideband Integrated Power Amplifiers



Freescale Semiconductor 로고
Freescale Semiconductor
MW7IC930NBR1 데이터시트, 핀배열, 회로
Freescale Semiconductor
Technical Data
Document Number: MW7IC930N
Rev. 0, 8/2009
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC930N wideband integrated circuit is designed with on - chip
matching that makes it usable from 728 to 960 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation.
Driver Application — 900 MHz
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Probability on CCDF.
Frequency (1)
Gps
(dB)
PAE
(%)
ACPR
(dBc)
MW7IC930NR1
MW7IC930GNR1
MW7IC930NBR1
728 - 768 MHz, 920 - 960 MHz,
3.2 W AVG., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
920 MHz
36.6 16.1 - 48.0
940 MHz
36.8 16.7 - 48.7
960 MHz
36.6 17.3 - 48.6
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 30 Watts
CW Pout.
TIDyQp2ic=al3P4o0utm@A 1 dB Compression Point ] 31 Watts CW, IDQ1 = 40 mA,
Driver Application — 700 MHz
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Probability on CCDF.
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC930NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC930GNR1
Frequency
728 MHz
748 MHz
768 MHz
Gps
(dB)
36.4
36.4
36.4
PAE
(%)
16.1
16.1
16.0
ACPR
(dBc)
- 47.7
- 47.8
- 47.9
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC930NBR1
Features
www.DataSheCeht4aUra.ccotmerized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (2)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
GND 1
NC 2
NC 3
VDS1
GND
4
5
16 GND
15 NC
VDS1
RFin 6
14 RFout/VDS2
GND 7
RFin
RFout/VDS2
VGS1
VGS2
8
9
NC 10
13 NC
GND 11
12 GND
VGS1
VGS2
Quiescent Current
Temperature Compensation (2)
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application test fixture. See Fig. 7.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
1


MW7IC930NBR1 데이터시트, 핀배열, 회로
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
(Case Temperature 80°C, 3.2 W CW)
Stage 1, 28 Vdc, IDQ1 = 106 mA
Stage 2, 28 Vdc, IDQ2 = 285 mA
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
Pin
Symbol
RθJC
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
4.7
Value (2,3)
5.5
1.6
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Unit
°C/W
(Case Temperature 80°C, 30 W CW)
Table 3. ESD Protection Characteristics
Stage 1, 28 Vdc, IDQ1 = 40 mA
Stage 2, 28 Vdc, IDQ2 = 340 mA
5.8
1.2
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
10 μAdc
www.DZaetarSo hGeaette4UVo.cltoamge Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1 μAdc
Gate - Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
1 μAdc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 14 μAdc)
VGS(th)
1.2
2
2.7 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 106 mA)
VGS(Q)
2.8
— Vdc
Fixture Gate Quiescent Voltage (4)
(VDD = 28 Vdc, IDQ1 = 106 mA, Measured in Functional Test)
VGG(Q)
6.9
9.4 11.9 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
4. VGG = 3.3 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
(continued)
MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
2
RF Device Data
Freescale Semiconductor




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RF LDMOS Wideband Integrated Power Amplifiers - Freescale Semiconductor