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MW7IC915NT1 반도체 회로 부품 판매점

RF LDMOS Wideband Integrated Power Amplifier



Freescale Semiconductor 로고
Freescale Semiconductor
MW7IC915NT1 데이터시트, 핀배열, 회로
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifier
The MW7IC915N wideband integrated circuit is designed with on - chip
matching that makes it usable from 698 to 960 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Driver Application — 900 MHz
Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
865 MHz
880 MHz
895 MHz
37.9 17.1 - 50.4
38.0 17.4 - 50.6
37.8 17.5 - 51.3
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 23.5 Watts CW
(3 dB Input Overdrive from Rated Pout)
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 30 to 41.5 dBm CW
Pout.
Typical Pout @ 1 dB Compression Point ] 15.5 Watts CW
Driver Application — 700 MHz
Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts,
IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
728 MHz
www.DataSheet4U.com748 MHz
768 MHz
37.8 17.2 - 49.5
37.8 17.3 - 50.5
37.7 17.3 - 51.4
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source S - Parameters
On - Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel.
Document Number: MW7IC915N
Rev. 0, 9/2009
MW7IC915NT1
728 - 960 MHz, 1.6 W AVG., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
CASE 1894 - 01
PQFN 8x8
PLASTIC
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC915NT1
1


MW7IC915NT1 데이터시트, 핀배열, 회로
VGS1
VGS2
Quiescent Current
Temperature Compensation (1)
24 23 22 21 20 19
NC 1
18 RFout/VDS2
GND 2
17 RFout/VDS2
RFin 3
16 RFout/VDS2
RFin 4
15 RFout/VDS2
RFin
RFout/VDS2
GND 5
14 RFout/VDS2
NC 6 7 8 9 10 11 12 13 RFout/VDS2
VDS1
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Operating Junction Temperature (1)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
VDD
Tstg
TJ
Pin
Symbol
RθJC
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
4.7
Value (1,2)
Unit
Vdc
Vdc
Vdc
°C
°C
dBm
Unit
°C/W
W - CDMA Application
www.Data(CSahseeetT4eUm.cpoemrature 82°C, Pout = 1.6 W CW)
Table 3. ESD Protection Characteristics
Stage 1, 28 Vdc, IDQ1 = 60 mA
Stage 2, 28 Vdc, IDQ2 = 130 mA
7.5
3.2
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22 - A113, IPC/JEDEC J - STD - 020
3 150 °C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MW7IC915NT1
2
RF Device Data
Freescale Semiconductor




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MW7IC915NT1

RF LDMOS Wideband Integrated Power Amplifier - Freescale Semiconductor