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PDF HN2A26FS Data sheet ( Hoja de datos )
| Número de pieza | HN2A26FS | |
| Descripción | Frequency General-Purpose Amplifier Applications | |
| Fabricantes | Toshiba Semiconductor | |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN2A26FS
HN2A26FS
Frequency General-Purpose Amplifier Applications
• Two devices are incorporated into a fine-pitch, Small-Mold (6-pin)
package.
• High voltage: VCEO = −50 V
• High current: IC = −100 mA (max)
• High hFE: hFE = 120 to 400
• Excellent hFE linearity
: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)
• Lead (Pb) - free
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
16
25
34
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Total rating.
Symbol
VCBO
VCEO
VEBO
IC
IB
PC(Note)
Tj
Tstg
Rating
−50
−50
−5
−100
−30
50
150
−55 ~ 150
Unit
V
V
V
mA
mW
mW
°C
°C
1. EMITTER1
(E1)
2. EMITTER2
(E2)
3. BASE2
(B2)
4. COLLECTOR2 (C2)
fS6 5. BASE1
(B1)
6. COLLECTOR1 (C1)
JEDEC
―
JEITA
―
TOSHIBA
2-1F1C
Weight: 0.001 g (typ.)
Electrical Characteristics (Ta = 25°C)
www.DataSheet4U.com
Characteristic
Symbol
Test Condition
Collector cutoff current
ICBO
VCB = −50 V, IE = 0
Emitter cutoff current
IEBO
VEB = −5 V, IC = 0
DC current gain
hFE(Note) VCE = −6 V, IC = −2 mA
Collector-emitter saturation voltage
VCE (sat) IC = −100 mA, IB = −10 mA
Transition frequency
fT VCE = −10 V, IC = −1 mA
Collector output capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE Classification Y (F): 120 ~ 140, GR (H): 200 ~ 400
( ) Marking symbol
Min Typ. Max Unit
⎯ ⎯ −0.1 µA
⎯ ⎯ −0.1 µA
120 ⎯ 400
― −0.18 −0.3
V
80 ⎯ ⎯ MHz
⎯ 1.6 ⎯ pF
Marking
PF
Type Name
hFE Rank
Equivalent Circuit (top view)
654
Q1 Q2
123
1
2005-04-11
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet HN2A26FS.PDF ] | |
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