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PDF BGU7003 Data sheet ( Hoja de datos )
| Número de pieza | BGU7003 | |
| Descripción | Wideband Silicon Germanium Low-noise Amplifier MMIC | |
| Fabricantes | NXP Semiconductors | |
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BGU7003
Wideband silicon germanium low-noise amplifier MMIC
Rev. 02 — 22 June 2010
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed,
low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891
package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
Low noise high gain microwave MMIC
Applicable between 40 MHz and 6 GHz
Integrated temperature stabilized bias for easy design
Bias current configurable with external resistor
Noise figure NF = 0.80 dB at 1.575 GHz
Insertion power gain = 18.3 dB at 1.575 GHz
110 GHz transit frequency - SiGe:C technology
Power-down mode current consumption < 1 μA
Optimized performance at low 5 mA supply current
ESD protection > 1 kV Human Body Model (HBM) on all pins
1.3 Applications
GPS
Satellite radio
Low-noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog / digital cordless applications
1 page  
NXP Semiconductors
BGU7003
Wideband silicon germanium low-noise amplifier MMIC
135° +0.5
90°
+1
+ 0.2
0
180°
0.2
− 0.2
0.5
6 GHz
1
1.0
+2 45°
0.8
0.6
0.4
+5
0.2
2
5 10
0° 0
100 MHz
−5
−135° −0.5
−1
− 90°
−2
− 45°
001aaj653
Fig 2.
Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω.
Input reflection coefficient (S11); typical values
1.0
135° +0.5
90°
+1
+2 45°
1.0
0.8
0.6
+ 0.2
0.4
+5
0.2
0
180°
0.2 0.5
1
2
5 10
0° 0
− 0.2
6 GHz
100 MHz
−5
−135° −0.5
−1
− 90°
−2
− 45°
001aaj654
Fig 3.
Tamb = 25 °C; ICC(tot) = 5.0 mA; VCC = 2.5 V; Pdrive = −30 dBm; Z0 = 50 Ω.
Output reflection coefficient (S22); typical values
1.0
BGU7003
Product data sheet
Rev. 02 — 22 June 2010
© NXP B.V. 2010. All rights reserved.
5 of 18
5 Page 
NXP Semiconductors
BGU7003
Wideband silicon germanium low-noise amplifier MMIC
135° +0.5
90°
+1
+2 45°
1.0
0.8
0.6
+ 0.2
0
180°
0.2 0.5
1
500 MHz
+5
2
5 10
0°
0.4
0.2
0
− 0.2
−5
−135° −0.5
3 GHz
−1
− 90°
−2
− 45°
001aaj666
1.0
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA; VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output
matched to 50 Ω).
Fig 14. Output reflection coefficient (S22); typical values
0
|s11|2
(dB)
−2
001aaj667
−4
−6
−8
−10
0
500 1000 1500 2000 2500 3000 3500
f (MHz)
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;
VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output
matched to 50 Ω).
Fig 15. Input return loss (|s11|2) as a function of
frequency; typical values
0
|s22|2
(dB)
−10
001aaj668
−20
−30
0
500 1000 1500 2000 2500 3000 3500
f (MHz)
Tamb = 25 °C; VCC = 2.5 V; ICC(tot) = 5.0 mA;
VENABLE ≥ 0.7 V; ZS = ZL = 50 Ω (input and output
matched to 50 Ω).
Fig 16. Output return loss (|s22|2) as a function of
frequency; typical values
BGU7003
Product data sheet
Rev. 02 — 22 June 2010
© NXP B.V. 2010. All rights reserved.
11 of 18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet BGU7003.PDF ] | |
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