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PDF MW7IC2220GNR1 Data sheet ( Hoja de datos )
| Número de pieza | MW7IC2220GNR1 | |
| Descripción | RF LDMOS Wideband Integrated Power Amplifiers | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2220N wideband integrated circuit is designed with on - chip
matching that makes it usable from 2000 to 2200 MHz. This multi - stage
www.datasshtreuect4tuur.ceoims rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD - SCDMA.
•
Typical Single - Carrier
IDQ2 = 300 mA, Pout =
2WW- CatDtsMAAvgP.e, rFfourlml Farnecqeu:eVnDcyD
B=a2n8dV, Colhtsa,nInDeQl1
=
80
mA,
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 31 dB
Power Added Efficiency — 13%
ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 20 Watts CW
Output Power
• Typical Pout @ 1 dB Compression Point ' 20 Watts CW
• Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 5 Watts
CW Pout.
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering S - Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with Enable/
Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MW7IC2220N
Rev. 0, 9/2008
MW7IC2220NR1
MW7IC2220GNR1
MW7IC2220NBR1
2110 - 2170 MHz, 2 W Avg., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC2220NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC2220GNR1
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC2220NBR1
GND
VDS1
NC
1
2
3
16 GND
15 NC
VDS1
NC 4
NC 5
RFin
VGS1
VGS2
VDS1
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
RFin
NC
VGS1
VGS2
VDS1
GND
6 14
7
8
9
10 13
11 12
(Top View)
RFout/VDS2
NC
GND
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
1
1 page  
www.datasheet4u.com
C1
C5
MW7IC2220N
Rev. 0
C6
VGG1 C2 R1 C3 R2 C4
C9
C10
C8
C7
C26
C16
C17
C18 C19 C20
C11
C13
C12
C14
C23 C24
C15
C25
C22
C21
Figure 4. MW7IC2220NR1(GNR1)(NBR1) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
5
5 Page 
Table 7. Common Source S - Parameters (VDD = 28 V, IDQ1 = 90 mA, IDQ2 = 420 mA, TC = 25°C, 50 Ohm System) (continued)
f
MHz
|S11|
S11
∠φ
|S21|
S21
∠φ
|S12|
S12
∠φ
|S22|
S22
∠φ
3500
0.759
- 140
0.486
- 56.1
0.004
- 81.1
0.954
155
3550
0.765
- 144
0.440
- 62.4
0.004
- 82
0.946
154
3600
0.770
- 148
0.401
- 69.7
0.004
- 85.9
0.941
153
www.datasheet346u5.c0om
3700
0.774
0.780
- 153
- 159
0.370
0.338
- 77.4
- 85.1
0.005
0.006
- 96.4
- 94.9
0.941
0.940
151
150
3750
0.795
- 164
0.306
- 93.2
0.006
- 99.3
0.933
148
3800
0.810
- 170
0.273
- 101
0.008
- 110
0.928
146
3850
0.821
- 175
0.239
- 107
0.008
- 113
0.934
145
3900
0.839
- 178
0.207
- 111
0.008
- 112
0.936
144
3950
0.855
179
0.178
- 114
0.008
- 117
0.927
144
4000
0.862
176
0.156
- 116
0.008
- 123
0.935
144
RF Device Data
Freescale Semiconductor
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
11
11 Page | ||
| Páginas | Total 27 Páginas | |
| PDF Descargar | [ Datasheet MW7IC2220GNR1.PDF ] | |
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