파트넘버.co.kr RF2401 데이터시트 PDF


RF2401 반도체 회로 부품 판매점

Low Noise Amplifier / Mixer



RF Micro Devices 로고
RF Micro Devices
RF2401 데이터시트, 핀배열, 회로
RF2401
      
     
• UHF Digital and Analog Receivers
www.datasheet4u.com
• Digital Communication Systems
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
• Spread Spectrum Communication Systems • General Purpose Frequency Conversion
   
The RF2401 is a monolithic integrated UHF receiver
front-end. The IC contains all of the required components
to implement the front-end functions of the receiver
except for the passive filtering and LO generation. It con-
tains a high dynamic range LNA (low-noise amplifier), an
attenuator to reduce signal level in the presence of large
received signals, a second RF amplifier, a double bal-
anced mixer, an LO buffer amplifier, and an IF output
amplifier which will drive a 50load. The output of the
LNA is made available as an output to permit the inser-
tion of a bandpass filter between the LNA and the attenu-
ator. The mixer input is buffered to provide high isolation
from the LO to the input port. Blocking capacitors are
contained on the chip (except for the IF Output).
       
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
GND 1
LNA IN 2
LNA
GND 3
VDD 4
PD 5
POWER
CONTROL
GND 6
ATTN
IF OUT 7
1 4 GND
1 3 LNA OUT
1 2 RES TERM
1 1 RF IN
1 0 ATTN
9 GND
8 LO IN
.157
.150
1
.018
.014
.344
.337
.050
.010
.004
8 °MAX
0°MIN
.244
.228
.065
.043
.050 .010
.016 .007
     !"
 
• Power Down Capability
• High Dynamic Range
• Low Current Drain
• High LO Isolation
• RF Attenuator for Large Signals
• 300MHz to 1100MHz Operation
    
RF2401
Low Noise Amplifier/Mixer
RF2401 PCBA Fully Assembled Evaluation Board
      
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
8
Rev B2 990511
8-1


RF2401 데이터시트, 핀배열, 회로
RF2401
Absolute Maximum Ratings
Parameter
Supply Voltage
Input LO and RF Levels
www.AdmatbaisehneteOt4pue.rcaotming Temperature
Storage Temperature
Rating
-0.5 to 7.0
+6
-40 to +85
-40 to +150
Unit
VDC
dBm
°C
°C
Parameter
Specification
Min. Typ. Max.
Overall
Frequency Range
300 to 1100
Cascade Gain
22 24
Cascade IP3
-17
Cascade Noise Figure
4.3
LO to LNA Input Rejection
65
First Section (LNA)
Noise Figure
2.9
Input VSWR
1.5:1
Input IP3
-10
Gain
11
Reverse Isolation
8 Output VSWR
Second Section (RF Amp,
30
1.3:1
Mixer, IF)
Noise Figure
10
Input VSWR
1.5:1
Input IP3
Conversion Gain
Conversion Gain Change
Output Impedance
LO Input
LO Frequency
LO Level
LO to RF Rejection
LO to IF Rejection
LO Input VSWR
Power Down
Turn On/Off Time
PD Input Resistance
Power Down “ON”
Power Down “OFF”
Power Supply
Voltage
Current Consumption
Current Consumption
-7
12
-25 -21 -17
50
250 to 1150
-6 to +3
25
30
1.3:1
<100
>50
VCC
0
4.5 to 6.5
20
0.2
30
0.5
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
MHz
dB
dBm
dB
dB
Condition
T = 25°C, VDD=5V, RF=915MHz,
LO = 986 MHz
RF = 850 MHz
Referenced to input
Single sideband
dB
dBm
dB
dB
dB
dBm
dB
dB
MHz
dBm
dB
dB
ns
k
V
V
V
mA
mA
Single sideband
In order to achieve a low VSWR match at
this input, a 10nH chip inductor is placed in
series with this port. If direct coupling is used
(no noise image filter between LNA OUT and
RF IN ports), no inductor is necessary.
ATTN =GND
ATTN =VDD, RF=850MHz
With external 75termination
Threshold voltage; Part is “ON”
Threshold voltage; Part is “OFF”
On
Power Down
8-2 Rev B2 990511




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RF2401 amplifier

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