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PDF RM009 Data sheet ( Hoja de datos )
| Número de pieza | RM009 | |
| Descripción | Power Amplifier Module | |
| Fabricantes | SKYWORKS | |
| Logotipo |  |
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RM009www.DataSheet4U.com
Power Amplifier Module for Dual-band GSM900 DCS1800
The RM009 is a dual-band Power Amplifier Module (PAM) designed in a compact
form factor for Class 4 GSM900 and Class 1 DCS1800 cellular handsets.
The module consists a GSM900 PA block and a DCS1800 PA block, matching
circuitry for 50 Ω input and output impedances, and bias control circuitry. Two
separate Heterojunction Bipolar Transistor (HBT) PA blocks are fabricated on a
single Gallium Arsenide (GaAs) die. One PA block operates in the GSM900 band
and the other supports the DCS1800 band. The PAM is optimized for three-cell
operation with both PAs sharing common power supply pins to distribute
current. A custom CMOS integrated circuit contains a current amplifier that
minimizes the required power control current (IAPC) to 60 µA, typical.
RF input and output ports are internally matched to 50 Ω to reduce the number of
external components for a dual-band design. Switching circuitry receives the
band select signal on the band select pin (BS) to switch between GSM (logic 0)
and DCS (logic 1). Analog Power Control (APC) controls the output power of
each PA selected by the band select signal. The extremely low leakage current
(2 µA, typical) of the RM009 dual-band module maximizes handset standby time.
Distinguishing Features
• High efficiency
GSM 54%
DCS 45%
• Input/output matching
50 Ω internal
• Small outline
9.1 mm x 11.6 mm
• Low profile
1.50 mm ±10%
• Low APC current
60 µA
Applications
• Class 4 GSM900 and Class 1
DCS1800 dual-band cellular
handsets
The functional block diagram shows the relationship of the dual PAs and the
CMOS device in the RM009.
Functional Block Diagram
DCS IN
Power Control
Band Select
GSM IN
Match
CMOS
Bias
Controller
Match
Match
HBT
DCS OUT
Match
GSM OUT
Data Sheet
Skyworks Solutions, Inc. Proprietary
© 1999–2002, Skyworks Solutions, Inc., All Rights Reserved.
101258B
July 26, 2002
1 page  
RM009
Package Dimensions and Pin Descriptions
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Packagewww.DataSheet4U.com Dimensions and Pin Descriptions
Figure 2 is a mechanical diagram of the pad layout for the 16-pin leadless, RM009 Power
Amplifier module. Figure 3 shows the device pin configuration and the pin numbering convention,
which starts with pin 1 in the upper left and increments counter-clockwise around the package. Pin
assignments and their functional descriptions are listed in Table 4. Figure 4 shows typical case
markings.
Figure 2. RM009 PAM Package Dimensions—16-Pin Leadless Module (All Views)
PIN 1
R0.381 Typ
2.286 ± 0.051
0.762 Typ
R0.860 Typ
0.127 Ref
TOP VIEW
SIDE VIEW
NOTE(S):
1. All contact points are gold plated, lead free-surfaces.
2. All dimensions are in millimeters.
3.899
± 0.051
1.905
± 0.051
BOTTOM VIEW
11.60 +0.20/-0.08
1.02 Typ
FRONT VIEW
1.55 ± 10%
101058_004
101258B
July 26, 2002
Skyworks Solutions, Inc. Proprietary
5
5 Page 
RM009
Power Amplifier Module for Dual-band GSM900 DCS1800 Applications
Technical Information
Standby Mode Control
www.DataSheet4U.Tcohme Combinational Logic cell includes enable circuitry that monitors the APC ramping voltage
from the power amplifier controller (PAC) circuit in the GSM transmitter. Typical handset designs
directly connect the PA VCC to the battery at all times, and for some PA manufacturers this requires
a control signal to set the device in or out of standby mode. The Skyworks PAM does not require a
Transmit Enable input because it contains a standby detection circuit that senses the VAPC to enable
or disable the PA. This feature helps minimize battery discharge when the PA is in standby mode.
When VAPC is below the enable threshold voltage, the PA goes into a standby mode, which reduces
battery current (ICC) to 6 µA, typical, under nominal conditions.
For voltages less than 700 mV at the APC input (pin 14), the PA bias is held at ground. As the APC
input exceeds the enable threshold, the bias will activate. After an 8 µsec delay, the amplifier
internal bias will ramp quickly to match the ramp voltage applied to the APC input. In order for the
internal bias to precisely follow the APC ramping voltage, it is critical that a ramp pedestal is set to
the APC input at or above the enable threshold level with a timing at least 8 µsec prior to ramp-up.
This will be discussed in more detail in the following section, “Power Ramping Considerations for
3GPP Compliance”.
Band Select
The Combinational Logic cell also includes a simple gate arrangement that selects the desired
operational band by activating the appropriate current buffer. The voltage threshold level at the
Band Select input (pin 16) will determine the active path of the bias output to the GaAs die.
Voltage Clamp
The Voltage Clamp circuit will limit the maximum bias voltage output applied to the bases of the
HBT devices on the GaAs die. This provides protection against electrical overstress (EOS) of the
active devices during high voltage and/or load mismatch conditions. Figure 8 shows the typical
transfer function of the APC input to buffer output under resistively loaded conditions. Notice the
enable function near 600 mV, and the clamp acting at 2.15 V, corresponding to a supply voltage of
4.0 V.
Figure 8. Base Bias Voltage vs. APC Input, VCC = 4.0 V
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0
APC input (volts)
101258B
July 26, 2002
Skyworks Solutions, Inc. Proprietary
clamping
occurs
2.5 3.0
101258_013a
11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet RM009.PDF ] | |
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