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Número de pieza | XD01014SD | |
Descripción | Class A/AB 15W Power Amplifier Module | |
Fabricantes | Sirenza Microdevices | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de XD01014SD (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Product Description
Sirenza Microdevices’ XD010-14S-D4F 15W power module is a robust 2-
stage Class A/AB amplifier module for use in GSM and EDGE RF applica-
tions. This module is optimized to minimize the EVM at typical operating
levels. The power transistors are fabricated using Sirenza's latest, high
performance LDMOS process. This unit operates from a single voltage
supply and has internal temperature compensation of the bias voltage to
ensure stable performance over the full temperature range. It is a drop-in,
no-tune solution for medium power applications requiring high efficiency,
excellent linearity, and unit-to-unit repeatability. It is internally matched to
50 ohms.
Functional Block Diagram
Stage 1
Stage 2
Bias
Network
12
Temperature
Compensation
3
4
RF in
V VD1 D2
Case Flange = Ground
RF out
XD010-14S-D4F
925-960 MHz Class A/AB
15W Power Amplifier Module
Product Features
• 50 W RF impedance
• 15W Output P1dB
• Single Supply Operation : Nominally 28V
• High Gain: 32 dB at 942 MHz
• High Efficiency: 31% at 942 MHz
• Robust 8000V ESD (HBM), Class 3B
• High Peak Power for Lower BER
• Ultra-low EVM
Applications
• Base Station PA driver
• Repeater
• GSM / EDGE
Key Specifications
Symbol
Parameter
Frequency
Frequency of Operation
P1dB
Gain
Output Power at 1dB Compression (single tone)
Gain at 12W Output Power (CW)
Gain Flatness
Peak-to-Peak Gain Variation
IRL Input Return Loss 12W CW
Efficiency
Drain Efficiency at 12W CW
RMS EVM at 8W EDGE output
Linearity
Peak EVM at 8W EDGE output
3rd Order IMD at 12W PEP (Two Tone)
Delay
Signal Delay from Pin 1 to Pin 4
Phase Linearity
Deviation from Linear Phase (Peak-to-Peak)
RTH, j-l
RTH, j-2
Thermal Resistance Stage 1 (Junction-to-Case)
Thermal Resistance Stage 2 (Junction-to-Case)
Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = 230 mA, IDQ2 =158 mA, TFlange = 25ºC
Unit
MHz
W
dB
dB
dB
%
%
%
dBc
nS
Deg
ºC/W
ºC/W
Min.
925
10
30
12
27
Typ.
15
32
0.4
18
31
2.5
6.7
-35
2.5
0.5
11
4
Max.
960
35
1.0
-30
1625-1675The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and
all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1 EDS-102936 Rev E
1 page Package Outline Drawing
XD010-14S-D4F 925-960 MHz 15W Power Amp Module
Recommended PCB Cutout and Landing Pads for the D4F Package
Note 3: Dimensions are in inches
Refer to Application note AN-060 “Installation Instructions for XD Module Series” for additional mounting info. App note availbale at at www.sirenza.com
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-102936 Rev E
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet XD01014SD.PDF ] |
Número de pieza | Descripción | Fabricantes |
XD01014SD | Class A/AB 15W Power Amplifier Module | Sirenza Microdevices |
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