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MW7IC2240NBR1 반도체 회로 부품 판매점

RF LDMOS Wideband Integrated Power Amplifiers



Freescale Semiconductor 로고
Freescale Semiconductor
MW7IC2240NBR1 데이터시트, 핀배열, 회로
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2240N wideband integrated circuit is designed with on - chip
matching that makes it usable from 2000 to 2200 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats including TD - SCDMA.
Typical Performance
TI(D2yQ1p11ic0=a-l29S10i7nm0gAlMe,-HICDzQa),2rrCi=ehr4aW2n0n-emClDAB,MaPnAoduPwt ei=drtf4horW=ma3at.nt8sc4eA:MvVgHD.z,D.FP=uAl2l R8Fr=Veoq7lut.s5e,ndcBy
Band
@
0.01% Probability on CCDF.
Power Gain — 30 dB
www.DataSheet4U.com Power Added Efficiency — 14%
ACPR @ 5 MHz Offset — - 50 dBc in 3.84 MHz Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40 Watts CW
Output Power
Pout @ 1 dB Compression Point = 40 Watts CW
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 Watts
CW Pout.
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current Temperature Compensation with Enable/
Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MW7IC2240N
Rev. 0, 11/2007
MW7IC2240NR1
MW7IC2240GNR1
MW7IC2240NBR1
2110 - 2170 MHz, 4 W Avg., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC2240NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC2240GNR1
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC2240NBR1
GND
VDS1
NC
1
2
3
16 GND
15 NC
VDS1
NC 4
NC 5
RFin
VGS1
VGS2
VDS1
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
RFin
NC
VGS1
VGS2
VDS1
GND
6 14
7
8
9
10 13
11 12
(Top View)
RFout/VDS2
NC
GND
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
1


MW7IC2240NBR1 데이터시트, 핀배열, 회로
Table 1. Maximum Ratings
Drain - Source Voltage
Rating
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
www.DataSheet44UW.coAmvg.
(Pout = 3.95 W Avg., Case Temperature = 68°C) Stage 1, 28 Vdc, IDQ1 = 90 mA
Stage 2, 28 Vdc, IDQ2 = 420 mA
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
Pin
Symbol
RθJC
Value
- 0.5, +65
- 0.5, +5
32, +0
- 65 to +150
150
225
20
Value (2,3)
3.9
1.3
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Unit
°C/W
40 W Avg.
(Pout = 39.4 W Avg., Case Temperature = 80°C) Stage 1, 28 Vdc, IDQ1 = 90 mA
Stage 2, 28 Vdc, IDQ2 = 420 mA
Table 3. ESD Protection Characteristics
3.2
1.2
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
II (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
2
RF Device Data
Freescale Semiconductor




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RF LDMOS Wideband Integrated Power Amplifiers - Freescale Semiconductor